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クロスライト社製シミュレータを用いた学術論文リスト
2014
“Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues”,
Marco Calciati, Michele Goano & others, AIP Advances, Vol. 4 No. 6 (2014), doi:10.1063/1.4882176
“Methods for slow axis beam quality improvement of high power broad area diode lasers”,
H. An, Y. Xiong, C.-L. J. Jiang, B. Schmidt, and G. Treusch, SPIE LASE, 2014, doi:10.1117/12.2040986
“A GaN AlGaN InGaN last quantum barrier in an InGaN/GaN multiple-quantum-well blue LED”,
Y. Bin, G. Zhi-You, X. Nan, Z. Pan-Jun, L. Jing, L. Fang-Zheng, et al., Chinese Physics B, Vol. 23, No. 4, 2014, doi:10.1088/1674-1056/23/4/048502
“Reduced efficiency droop in blue InGaN light-emitting diodes by thin AlGaN barriers”,
J.-Y. Chang, Y.-A. Chang, T.-H. Wang, F.-M. Chen, B.-T. Liou, and Y.-K. Kuo, Optics letters, Vol. 39, No. 3, 2014, doi:10.1364/OL.39.000497
“GaN-Based Light-Emitting-Diode With a p-InGaN Layer”,
P. Chen, C.-H. Kuo, W.-C. Lai, Y. A. Chen, L. Chang, and S. Chang, Journal of Display Technology, Vol. 10, No. 3, 2014, doi:10.1109/JDT.2013.2293767
“Performance Enhancement of Blue InGaN Light-Emitting Diodes With a GaN AlGaN GaN Last Barrier and Without an AlGaN Electron Blocking Layer”,
L. Cheng and S. Wu, Quantum Electronics, IEEE Journal of, Vol. 50, No. 4, 2014, doi:10.1109/JQE.2014.2305451
“Impact of Surface Recombination on the Performance of Phosphor-Free InGaN/GaN Nanowire White Light Emitting Diodes”,
A. T. Connie, H. P. T. Nguyen, Q. Wang, I. Shih, and Z. Mi, CLEO: Applications and Technology, 2014, doi:10.1364/CLEO_AT.2014.AF2P.6
“Tunnel injection InGaN/GaN dot-in-a-wire white-light-emitting diodes”,
M. Djavid, H. Nguyen, S. Zhang, K. Cui, S. Fan, and Z. Mi, Semiconductor Science and Technology, Vol. 29, No. 8, 2014, doi:10.1088/0268-1242/29/8/085009
“A systematic study of silicon germanium interdiffusion for next generation semiconductor devices”, Y. Dong, PhD Thesis, University of British Columbia (Canada), 2014.
“Effect of quantum dot position and background doping on the performance of quantum dot enhanced GaAs solar cells”,
K. Driscoll, M. F. Bennett, S. J. Polly, D. V. Forbes, and S. M. Hubbard, Applied Physics Letters, Vol. 104, No. 2, 2014, doi:10.1063/1.4862028
“Improve power conversion efficiency of slab coupled optical waveguide lasers”,
J. Fan, L. Zhu, M. Dogan, and J. Jacob, Optics Express, Vol. 22, No. 15, 2014, doi:10.1364/OE.22.017666
“Modified InGaN/GaN quantum wells with dual-wavelength green-yellow emission ”,
Z. Fang, Q. Li, X. Shen, H. Xiong, J. Cai, J. Kang, et al., Journal of Applied Physics, Vol. 115, No. 4, 2014, doi:10.1063/1.4863208
“Integrated Power Devices and TCAD Simulation”,
Y. Fu, Z. Li, W. T. Ng, and J. K. Sin, CRC Press, 2014, 1466583819
“Triggering of guiding and antiguiding effects in GaN-based VCSELs”,
E. Hashemi, J. Bengtsson, J. Gustavsson, M. Stattin, M. Glauser, G. Cosendey, et al., SPIE OPTO, 2014, doi:10.1117/12.2038152
“Efficiency improvement by polarization-reversed electron blocking structure in GaN-based Light-emitting diodes”,
X. Ji, T. Wei, F. Yang, H. Lu, X. Wei, P. Ma, et al., Optics Express, Vol. 22, No. 103, 2014, doi:10.1364/OE.22.0A1001
“Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells”,
Y. Jing, Z. De-Gang, J. De-Sheng, L. Zong-Shun, C. Ping, L. Liang, et al., Chinese Physics B, Vol. 23, No. 6, 2014, doi::10.1088/1674-1056/23/6/068801
“Enhanced performance of GaN-based light-emitting diodes with InGaN/GaN superlattice barriers”,
C. Jin-Xin, S. Hui-Qing, Z. Huan, Z. Pan-Jun, and G. Zhi-You, Chinese Physics B, Vol. 23, No. 5, 2014, doi:10.1088/1674-1056/23/5/058502
“Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer”,
Z. G. Ju, W. Liu, Z.-H. Zhang, S. T. Tan, Y. Ji, Z. Kyaw, et al., ACS Photonics, Vol. 1, No. 4, 2014, doi:10.1021/ph500001e
“Simulation of a Single-Mode Tunnel-Junction-Based Long-Wavelength VCSEL”,
Z. D. Kaftroudi, E. Rajaei, and A. Mazandarani, Journal of Russian Laser Research, Vol. 35, No. 2, 2014, doi:10.1007/s10946-014-9408-5
“Y-function analysis of the low temperature behavior of ultra-thin film FD SOI MOSFETs”,
A. Karsenty and A. Chelly, Active and Passive Electronic Components Vol. 2014, doi:10.1155/2014/697369
“Efficiency enhancement in Cu 2 ZnSnS 4 solar cells with subwavelength grating nanostructures”,
S.-Y. Kuo and M.-Y. Hsieh, Nanoscale 6, No.13, 2014, doi:10.1039/C4NR00566J
“Device modeling of the performance of Cu (In, Ga) Se2 solar cells with V-shaped bandgap profiles”,
S.-Y. Kuo, M.-Y. Hsieh, D.-H. Hsieh, H.-C. Kuo, and F.-I. Lai, International Journal of Photoenergy Vol. 2014, doi:10.1155/2014/186579
“On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes”,
Z. Kyaw, Z.-H. Zhang, W. Liu, S. T. Tan, Z. G. Ju, X. L. Zhang, et al., Optics express, Vol. 22, No. 1, 2014, doi:10.1364/OE.22.000809
“Suppression of electron leakage by inserting a thin undoped InGaN layer prior to electron blocking layer in InGaN-based blue-violet laser diodes”,
L. Le, D. Zhao, D. Jiang, P. Chen, Z. Liu, J. Yang, et al., Optics Express, Vol. 22, No. 10, 2014, doi:http://dx.doi.org/10.1364/OE.22.011392
“Performance enhancement of blue light-emitting diodes by adjusting the p-type doped last barrier”,
Y. Lei, Z. Liu, M. He, Z. Li, J. Kang, X. Yi, et al., Applied Physics A, Vol. 115, No. 4, 2014, doi:10.1007/s00339-014-8393-4
“High-Efficiency and Crack-Free InGaN-Based LEDs on a 6-inch Si (111) Substrate With a Composite Buffer Layer Structure and Quaternary Superlattices Electron-Blocking Layers”,
Z.-Y. Li, C.-Y. Lee, D.-W. Lin, B.-C. Lin, K.-C. Shen, C.-H. Chiu, et al., Quantum Electronics, IEEE Journal of Vol. 50, No. 5, 2014, doi:10.1109/JQE.2014.2304460
“A quantitative method for determination of carrier escape efficiency in GaN-based light-emitting diodes: A comparison of open-and short-circuit photoluminescence”,
S.-H. Lim, Y.-H. Ko, and Y.-H. Cho, Applied Physics Letters, Vol. 104, No. 9, 2014, doi:10.1063/1.4867238
“Design and fabrication of a InGaN vertical-cavity surface-emitting laser with a composition-graded electron-blocking layer”,
B. C. Lin, Y. A. Chang, K. J. Chen, C. H. Chiu, Z. Y. Li, Y. P. Lan, et al., Laser Physics Letters, Vol. 11, No. 8, 2014, doi:10.1088/1612-2011/11/8/085002
“Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer”,
B.-C. Lin, K.-J. Chen, C.-H. Wang, C.-H. Chiu, Y.-P. Lan, C.-C. Lin, et al., Optics express, Vol. 22, No. 1, 2014, doi:10.1364/OE.22.000463
“Reduced droop effect in nitride light emitting diodes by taper-shaped electron blocking layer”,
C. Liu, Z. Ren, X. Chen, B. Zhao, X. Wang, and S. Li, IEEE Photonics Technology Letters, Vol. 26, No. 13, 2014, doi:10.1109/LPT.2014.2325598
“Improvement of light power and efficiency droop in GaN-based LEDs using graded InGaN hole reservoir layer”,
T. Lu, Z. Ma, C. Du, Y. Fang, F. Chen, Y. Jiang, et al., Applied Physics A, Vol. 114, No. 4, 2014, doi:10.1007/s00339-014-8284-8
“Effect of stair-case electron blocking layer on the performance of blue InGaN based LEDs”,
T. Lu, Z. Ma, C. Du, Y. Fang, F. Chen, Y. Jiang, et al., Journal of Display Technology, Vol. 10, No. 2, 2014, doi:10.1109/JDT.2013.2289358
“Modeling of HOT (111) HgCdTe MWIR detector for fast response operation”,
P. Martyniuk, W. Gawron, W. Pusz, D. Stanaszek, and A. Rogalski, Optical and Quantum Electronics, Feb. 2014, doi:10.1007/s11082-013-9860-4
“MOCVD grown MWIR HgCdTe detectors for high operation temperature conditions”,
P. Martyniuk, A. Ko niewski, A. K b owski, W. Gawron, and A. Rogalski, Opto-Electronics Review, Vol. 22, No. 2, 2014, doi:10.2478/s11772-014-0186-y
“Phosphor-free InGaN/GaN/AlGaN core-shell dot-in-a-wire white light-emitting diodes”,
Z. Mi, H. P. Nguyen, S. Zhang, A. T. Connie, M. G. Kibria, Q. Wang, et al., SPIE OPTO, 2014, doi:10.1117/12.2041284
“Effects of the p-AlInGaN/GaN superlattices’ structure on the performance of blue LEDs”,
L. Na, Y. Xiaoyan, L. Meng, G. Enqing, F. Xiangxu, S. Zhao, et al., Journal of Semiconductors, Vol. 35, No. 2, 2014, doi:10.1088/1674-4926/35/2/024010
“Origin of InGaN/GaN light-emitting diode efficiency improvements using tunnel-junction-cascaded active regions”,
J. Piprek, Applied Physics Letters, Vol. 104, No. 5, 2014, doi:10.1063/1.4864311
“Blue light emitting diode exceeding 100% quantum efficiency”,
J. Piprek, physica status solidi (RRL)-Rapid Research Letters, Vol. 8, No. 5, 2014, doi:10.1002/pssr.201409027
“Delta-Doping Effects on Quantum-Dot Solar Cells”,
S. J. Polly, D. V. Forbes, K. Driscoll, S. Hellstrom, and S. M. Hubbard, IEEE Journal of Photovoltaics, Vol. 4, No. 4, 2014, doi:10.1109/JPHOTOV.2014.2316677
“Mid-Wavelength Infrared nBn for HOT Detectors”,
A. Rogalski and P. Martyniuk, Journal of Electronic Materials, Vol. 43 No. 8, 2014, doi:10.1007/s11664-014-3161-y
“Tandem structure for efficiency improvement in GaN based light-emitting diodes”,
M.-C. Tsai, B. Leung, T.-C. Hsu, and Y.-K. Kuo, Journal of Lightwave Technology, Vol. 32, No. 9, 2014, doi:10.1109/JLT.2014.2313953
“Ultrabroad stimulated emission from quantum well laser”,
H. Wang, X. Zhou, H. Yu, J. Mi, J. Wang, J. Bian, et al., Applied Physics Letters, Vol. 104, No. 25, 2014, doi:10.1063/1.4885366
“Improvement of carrier distribution by using thinner quantum well with different location”,
S.-W. Wang, D.-W. Lin, C.-Y. Lee, C.-C. Lin, and H.-C. Kuo, SPIE OPTO, 2014, doi:10.1117/12.2038402
“Self-heating dependent characteristic of GaN-based light-emitting diodes with and without AlGaInN electron blocking layer”,
T. Wang, J. Xu, and X. Wang, Chinese Science Bulletin, Vol. 59 No. 20, 2014, doi:10.1007/s11434-014-0235-4
“Enhanced performances of InGaN/GaN-based blue light-emitting diode with InGaN/AlInGaN superlattice electron blocking layer”,
Z. Xiang-Jing, Z. Jun, L. Dan-Wei, Y. Han-Xiang, R. Zhi-Wei, T. Jin-Hui, et al., Chinese Physics B, Vol. 23, No. 6, 2014, doi:10.1088/1674-1056/23/6/068502
“Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p―i―n avalanche photodiodes”,
L. Xiao-Jing, Z. De-Gang, J. De-Sheng, L. Zong-Shun, C. Ping, W. Liang-Liang, et al., Chinese Physics B, Vol. 23, No. 2, 2014, doi:10.1088/1674-1056/23/2/028503
“Performance improvement of GaN-based light-emitting diode with a p-InAlGaN hole injection layer”,
Y. Xiao-Peng, F. Guang-Han, D. Bin-Bin, X. Jian-Yong, X. Yao, Z. Tao, et al., Chinese Physics B, Vol. 23, No. 2, 2014, doi:10.1088/1674-1056/23/2/028502
“Advantages of blue InGaN light-emitting diodes without an electron-blocking layer by using AlGaN step-like barriers”,
J.-Y. Xiong, Y.-Q. Xu, S.-W. Zheng, G.-H. Fan, and T. Zhang, Applied Physics A, Vol. 114, No. 2, 2014, doi:10.1007/s00339-013-8069-5
“Advantages of GaN based light-emitting diodes with p-AlGaN/InGaN superlattice last quantum barrier”,
J.-Y. Xiong, Y.-Q. Xu, S.-W. Zheng, F. Zhao, B.-B. Ding, J.-J. Song, et al., Optics Communications, Vol. 312, No. 2014, doi:10.1016/j.optcom.2013.08.053
“Study of dual-blue light-emitting diodes with asymmetric AlGaN graded barriers”,
Q.-r. Yan, Y. Zhang, and J.-z. Li, Optoelectronics Letters, Vol. 10, No. 2014, doi:10.1007/s11801-014-4062-2
“Analysis of InGaN light-emitting diodes with GaN-AlGaN and AlGaN-GaN composition-graded barriers”,
Y. Yang, J. Wang, J. Li, and Y. Zeng, Journal of Applied Physics, Vol. 115, No. 23, 2014, doi:10.1063/1.4879252
“Enhancement of hole injection with Mg Si-codoped barriers in InGaN-based light-emitting diodes”,
Y. Yang and Y. Zeng, Optics Communications, Vol. 326, No. 2014, doi:10.1016/j.optcom.2014.03.064
“Enhanced performance of InGaN light-emitting diodes with InGaN/GaN supperlattice and graded-composition InGaN/GaN supperlattice interlayers”,
Y. Yang and Y. Zeng, physica status solidi (a), Vol. 211, No. 7, 2014, doi:10.1002/pssa.201431088
“Enhanced performance of InGaN light-emitting diodes with InGaN and composition-graded InGaN interlayers”,
Y.-J. Yang and Y.-P. Zeng, Applied Physics A, Vol. 211 No. 7 2014, doi:10.1007/s00339-014-8321-7
“Modeling of LWIR nBn HgCdTe photodetector”,
Z. Ye, Y. Chen, P. Zhang, C. Lin, X. Hu, R. Ding, et al., SPIE Defense+ Security, 2014, doi:10.1117/12.2053288
“Photon trapping photodiode design in HgCdTe mid-wavelength infrared focal plane array detectors”,
Z. Ye, P. Zhang, Y. Li, Y. Chen, S. Zhou, C. Sun, et al., Optical and Quantum Electronics, March 2014, doi:10.1007/s11082-014-9904-4
“Performance of Blue LEDs With N-AlGaN/N-GaN Superlattice as Electron-Blocking Layer”,
X. Yu, G. Fan, S. Zheng, B. Ding, and T. Zhang, Photonics Technology Letters, IEEE, Vol. 26, No. 11, 2014, doi:10.1109/LPT.2014.2316546
“Zener Phenomena in InGaAs/InAlAs/InP Avalanche Photodiodes”,
D. ak, J. Jure czyk, and J. Kaniewski, Detection, Vol. 2, No. 2, 2014, doi:10.4236/detection.2014.22003
“Efficiency-Droop Reduction in Blue InGaN Light-Emitting Diodes with Low Temperature p-type Insertion Layer”,
J. Zhang, X.-J. Zhuo, D.-W. Li, Z.-W. Ren, H.-X. Yi, J.-H. Tong, et al., Superlattices and Microstructures, Vol. 73 Septermber 2014, doi:10.1016/j.spmi.2014.05.017
“Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes by using staggered quantum wells”,
M. Zhang, Y. Li, S. Chen, W. Tian, J. Xu, X. Li, et al., Superlattices and Microstructures, July 2014, doi:10.1016/j.spmi.2014.07.002
“Design of HgCdTe heterojunction photodiodes on Si substrate”,
P. Zhang, Z. Ye, Y. Chen, C. Lin, X. Hu, R. Ding, et al., SPIE Sensing Technology+ Applications, 2014, doi:10.1117/12.2050089
“On the Carrier Injection Efficiency and Thermal Property of InGaN/GaN Axial Nanowire Light Emitting Diodes”,
S. Zhang, A. T. Connie, D. A. Laleyan, H. Pham Trung Nguyen, Q. Wang, J. Song, et al., Vol. 50 No. 6, 2014, doi:10.1109/JQE.2014.2317732
“On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer”,
Z.-H. Zhang, Y. Ji, W. Liu, S. T. Tan, Z. Kyaw, Z. Ju, et al., Applied Physics Letters, Vol. 104, No. 7, 2014, doi:10.1063/1.4866041
“Influence of AlGaN Electron Blocking Layer on Modulation Bandwidth of GaN-Based Light Emitting Diodes”,
S. Zhu, J. Wang, J. Yan, Y. Zhang, Y. Pei, Z. Si, et al., ECS Solid State Letters, Vol. 3, No. 3, 2014, doi:10.1149/2.007403ssl
“Enhanced performances of InGaN/GaN-based blue LED with an ultra-thin inserting layer between GaN barriers and InGaN wells”,
X.-J. Zhuo, J. Zhang, D.-W. Li, X.-F. Wang, W.-L. Wang, J.-S. Diao, et al., Optics Communications, Vol. 325, No. 2014, doi:10.1016/j.optcom.2014.04.018
2013
“Optimisation of optical properties of a long-wavelength GaInNAs quantum-well laser diode”,
M. Alias, A. Al-Omari, F. Maskuriy, F. Faiz, and S. Mitani, Quantum Electronics, Vol. 43, No. 11, 2013, doi:10.1070/QE2013v043n11ABEH015127
“Analytical model for threshold-base current of a transistor laser with multiple quantum wells in the base”,
R. Basu, B. Mukhopadhyay, and P. K. Basu, Optoelectronics, IET, Vol. 7, No. 3, 2013, doi:10.1049/iet-opt.2012.0039
“Comment on” Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop”[Phys. Rev. Lett. 110, 177406 (2013)]”,
F. Bertazzi, M. Goano, X. Zhou, M. Calciati, G. Ghione, M. Matsubara, et al., arXiv preprint arXiv:1305.2512, 2013
“Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content”,
Z. Bi-Jun, C. Xin, R. Zhi-Wei, T. Jin-Hui, W. Xing-Fu, L. Dan-Wei, et al., Chinese Physics B, Vol. 22, No. 8, 2013, doi:10.1088/1674-1056/22/8/088401
“Performance improvement of blue InGaN light-emitting diodes with a specially designed n-AlGaN hole blocking layer”,
D. Bin-Bin, Z. Fang, S. Jing-Jing, X. Jian-Yong, Z. Shu-Wen, Z. Yun-Yan, et al., Chinese Physics B, Vol. 22, No. 8, 2013, doi:10.1088/1674-1056/22/8/088503
“Enhancing light output of GaN-based LEDs with graded-thickness barriers and wells”,
B. Cao, R. Hu, Z. Gan, and S. Liu, IEEE Photonics Technology Letters, Vol. 25, No. 18, 2013, pp. 1762 – 1765, doi:10.1109/LPT.2013.2275166
“Advantages of blue InGaN light-emitting diodes with composition‐graded barriers and electron‐blocking layer”,
J. Y. Chang and Y. K. Kuo, physica status solidi (a), Vol. 210, No. 6, 2013, doi:10.1002/pssa.201228764
“Improved quantum efficiency in green InGaN light-emitting diodes with InGaN barriers”,
J.-Y. Chang, Y.-A. Chang, F.-M. Chen, Y.-T. Kuo, and Y.-K. Kuo, Photonics Technology Letters, IEEE, Vol. 25, No. 1, 2013, doi:10.1109/LPT.2012.2227700
“Numerical study of the suppressed efficiency droop in blue InGaN LEDs with polarization-matched configuration”,
J.-Y. Chang, F.-M. Chen, Y.-K. Kuo, Y.-H. Shih, J.-K. Sheu, W.-C. Lai, et al., Optics letters, Vol. 38, No. 16, 2013, doi:10.1364/OL.38.003158
“Simulation of high-efficiency GaN/InGaN pin solar cell with suppressed polarization and barrier effects”,
J.-Y. Chang, S.-H. Yen, Y.-A. Chang, and Y.-K. Kuo, Quantum Electronics, IEEE Journal of, Vol. 49, No. 1, 2013, doi:10.1109/JQE.2012.2225601
“Numerical simulation of GaN-based LEDs with chirped multiquantum barrier structure”,
S. Chang, Y. Lin, C. Liu, T. Ko, S. Hon, and S. Li, Quantum Electronics, IEEE Journal of, Vol. 49, No. 4, 2013, doi:10.1109/JQE.2013.2250919
“Efficiency enhancement in InGaN/GaN light-emitting diodes by decreasing the thickness of last barrier”,
L.-W. Cheng, Y. Sheng, C.-S. Xia, and W.-D. Hu, Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on, doi:10.1109/NUSOD.2013.6633118
“Theory and design optimization of energy-efficient hydrophobic wafer-bonded III V/Si hybrid semiconductor optical amplifiers”,
S. Cheung, Y. Kawakita, K. Shang, and S. Yoo, Journal of Lightwave Technology, Vol. 31, No. 24, 2013, doi:10.1109/JLT.2013.2284287
“Physical modeling of an optical memory cell based on quantum dot-in-well hybrid structure”,
L. Ding, L. Fan, Y. Li, and F. Guo, Optical and Quantum Electronics, Vol. 45, No. 7, 2013, doi:10.1007/s11082-013-9663-7
“Simulation on a Charge Sensitive Infrared Phototransistor for 45μm Wavelength”,
L. Ding, Y. Li, and F. Guo, Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on, doi:10.1109/NUSOD.2013.6633105
“Weak light characteristics of potential biosensor unit”,
L. Ding, Y.-Q. Li, X.-Y. Liu, J.-H. Shen, S. H. Zhang, and F.-M. Guo, Micro & Nano Letters, IET, Vol. 8, No. 10, 2013, doi:10.1049/mnl.2013.0292
“Weak light characteristics of a new photoelectric sensor with potential biosensor application”,
L. Ding, M. Wang, Y. Li, X. Liu, J. Shen, and F. Guo, Nano/Micro Engineered and Molecular Systems (NEMS), 2013 8th IEEE International Conference on, doi:10.1109/NEMS.2013.6559947
“Physical modeling and simulation of a high-performance charge sensitive infrared phototransistor”,
L. Ding, P. Xu, Y. Li, and F. Guo, Optical and Quantum Electronics, Oct. 2013, doi:10.1007/s11082-013-9808-8
“Study of the effect of in composition variation in the active region and barrier layers on the structure performance of 462 nm InGaN QW lasers”,
A. Dragulinescu, Electronics, Computers and Artificial Intelligence (ECAI), 2013 International Conference on, doi:10.1109/ECAI.2013.6636165
“Doping concentration variation in the barrier layers of a 462 nm In 0.02 Ga 0.98 N QW laser for structure performance improvement”,
A. Dragulinescu, Electronics, Computers and Artificial Intelligence (ECAI), 2013 International Conference on, doi:10.1109/ECAI.2013.6636166
“Investigation of the design parameters of quantum dot enhanced III-V solar cells”,
K. Driscoll, M. Bennett, S. Polly, D. V. Forbes, and S. M. Hubbard, SPIE OPTO 2013, doi:10.1117/12.2005457
“Nano-device modeling for charge-sensitive infrared photodetector used in very long wavelength and THz”,
L. Fan, L. Ding, Q. Weng, and F. Guo, Integrated Ferroelectrics, Vol. 145, No. 1, 2013, doi:10.1080/10584587.2013.788423
“Performance improvement of blue light-emitting diodes with an AlInN/GaN superlattice electron-blocking layer”,
Z. Fang, Y. Guang-Rui, S. Jing-Jing, D. Bin-Bin, X. Jian-Yong, S. Chen, et al., Chinese Physics B, Vol. 22, No. 5, 2013, doi:10.1088/1674-1056/22/5/058503
“Performance enhancement of GaN-based laser diodes with prestrained growth”,
M. Feng, J. Liu, S. Zhang, D. Jiang, Z. Li, K. Zhou, et al., IEEE Photonics Technology Letters Vol. 25 No. 4, 2013, pp. 2401-2404, doi:10.1109/LPT.2013.2287206
“High efficient GaN-based laser diodes with tunnel junction”,
M. Feng, J. Liu, S. Zhang, D. Jiang, Z. Li, K. Zhou, et al., Applied Physics Letters, Vol. 103, No. 4, 2013, doi:10.1063/1.4816598
“Design considerations for GaN-based blue laser diodes with InGaN upper waveguide layer”,
M.-X. Feng, J.-P. Liu, S.-M. Zhang, D.-S. Jiang, Z.-C. Li, D.-Y. Li, et al., Selected Topics in Quantum Electronics, IEEE Journal of, Vol. 19, No. 4, 2013, doi:10.1109/JSTQE.2012.2237015
“Influence of barrier thickness modulation of InGaN/GaN MQW solar cells”,
C.-C. Hsieh, F.-I. Lai, and H.-W. Wang, Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th, doi:10.1109/PVSC.2013.6744885
“Embedded InN dot-like structure within InGaN layers using gradient-Indium content in nitride-based solar cell”,
L.-H. Hsu, C.-C. Lin, M.-H. Tan, Y.-L. Yeh, D.-W. Lin, H.-V. Han, et al., Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th, doi:10.1109/PVSC.2013.6744965
“Numerical Simulation of the High Gain and Low Breakdown Voltage InGaAs/InP Avalanche Photodiode”,
D. Hu, D. Xiong, and F. Guo, Advanced Materials Research, Vol. 652, No. 2013, doi:10.4028/www.scientific.net/AMR.652-654.612
“830-nm AlGaAs-InGaAs graded index double barrier separate confinement heterostructures laser diodes with improved temperature and divergence characteristics”,
C.-T. Hung and T.-C. Lu, Quantum Electronics, IEEE Journal of, Vol. 49, No. 1, 2013, doi:10.1109/JQE.2012.2231053
“Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier”,
Y. Ji, Z.-H. Zhang, S. T. Tan, Z. G. Ju, Z. Kyaw, N. Hasanov, et al., Optics letters, Vol. 38, No. 2, 2013, doi:10.1364/OL.38.000202
“Performance enhancement of an InGaN light-emitting diode with an AlGaN/InGaN superlattice electron-blocking layer”,
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M. V. Kisin and H. S. El-Ghoroury, IEEE Journal of Selected Topics in Quantum Electronics, Vol. 19, No. 5, 2013, doi:10.1109/JSTQE.2013.2242851
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“Advantages of InGaN solar cells with p-doped and high-Al-content superlattice AlGaN barriers”,
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“Self-Consistent Simulation Model and Enhancement of Wavelength Tuning of InGaAsP/InP Multisection DBR Laser Diodes”,
G. Kyritsis and N. Zakhleniuk, Selected Topics in Quantum Electronics, IEEE Journal of, Vol. 19, No. 5, 2013, doi:10.1109/JSTQE.2013.2259581
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H. Li, J. Kang, P. Li, J. Ma, H. Wang, M. Liang, et al., Applied Physics Letters, Vol. 102, No. 1, 2013, doi:10.1063/1.4773558
“Quantum Efficiency Enhancement of 530 nm InGaN Green Light-Emitting Diodes with Shallow Quantum Well”,
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“Modeling of Vertical GaN Based Resonant Cavity Light-Emitting Diode”,
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Y. Li, S. Chen, W. Tian, Z. Wu, Y. Fang, J. Dai, et al., Photonics Journal, IEEE, Vol. 5, No. 4, 2013, doi:10.1109/JPHOT.2013.2271718
“Effect of Polarization-Matched n-Type AlGaInN Electron-Blocking Layer on the Optoelectronic Properties of Blue InGaN Light-Emitting Diodes”,
Y. Li, Y. Gao, M. He, J. Zhou, Y. Lei, L. Zhang, et al., Display Technology, Journal of, Vol. 9, No. 4, 2013, doi:10.1109/JDT.2012.2226206
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Y. Li, Z.-H. Ye, C. Lin, X.-N. Hu, R.-J. Ding, and L. He, Optical and Quantum Electronics, Vol. 45, No. 7, 2013, doi:10.1007/s11082-012-9651-3
“3D modeling of CMOS image sensor and aperture size effect”,
Z. Li, Y. Xiao, K. Uehara, M. Lestrade, S. Gao, Y. Fu, et al., Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on, doi:10.1109/NUSOD.2013.6633156
“Comprehensive anaylsis of GaSb-based mid-infrared vertical-cavity surface-emitting lasers”,
Z. Q. Li and Z. M. S. Li, Vol. 8639, No. 2013,
“A look into the origin of shunt leakage current of Cu(In,Ga)Se2 solar cells via experimental and simulation methods”,
Y.-K. Liao, S.-Y. Kuo, M.-Y. Hsieh, F.-I. Lai, M.-H. Kao, S.-J. Cheng, et al., Solar Energy Materials and Solar Cells, Vol. 117, No. 2013, doi:10.1016/j.solmat.2013.05.031
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B. Lin, K. Chen, H. Han, Y. Lan, C. Chiu, C. Lin, et al., IEEE Photonics Technology Letters, Vol. 25 No. 1, 2013, pp. 2062-2065, doi:10.1109/LPT.2013.2281068
“Critical Electric Field of InGaN pin Solar Cell”,
D. Y. Lin and C. Y. Chi, Applied Mechanics and Materials, Vol. 284, No. 2013, doi:10.4028/www.scientific.net/AMM.284-287.1168
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G. Liu, J. Zhang, C. K. Tan, and N. Tansu, Photonics Journal, IEEE, Vol. 5, No. 2, 2013, doi:10.1109/JPHOT.2013.2255028
“Investigation of GaN-based light-emitting diodes using a p-GaN/i-InGaN short-period superlattice structure as last quantum barrier”,
X. Liu, G. Fan, S. Zheng, C. Gong, T. Lu, Y. Zhang, et al., Science China Technological Sciences, Vol. 56, No. 1, 2013, doi:10.1007/s11431-012-5052-x
“Electrical injection schemes for nanolasers”,
A. Lupi, I.-S. Chung, and K. Yvind, SPIE OPTO 2013, doi:10.1109/LPT.2013.2293511
“MOCVD grown HgCdTe device structure for ambient temperature LWIR detectors”,
P. Madejczyk, W. Gawron, P. Martyniuk, A. K b owski, A. Piotrowski, J. Pawluczyk, et al., Semiconductor Science and Technology, Vol. 28, No. 10, 2013, doi:10.1088/0268-1242/28/10/105017
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P. Martyniuk, W. Gawron, P. Madejczyk, A. Rogalski, and J. Piotrowski, Metrology and Measurement Systems, Vol. 20, No. 2, 2013, doi:10.2478/mms-2013-0014
“Theoretical Modeling of HOT HgCdTe Barrier Detectors for the Mid-Wave Infrared Range”,
P. Martyniuk, W. Gawron, and A. Rogalski, Journal of Electronic Materials, Vol. 42, No. 11, 2013, doi:10.1007/s11664-013-2737-2
“Theoretical modelling of MWIR thermoelectrically cooled nBn HgCdTe detector”,
P. Martyniuk and A. Rogalski, Bulletin of the Polish Academy of Sciences: Technical Sciences, Vol. 61, No. 1, 2013, doi:10.2478/bpasts-2013-0020
“Modelling of MWIR HgCdTe complementary barrier HOT detector”,
P. Martyniuk and A. Rogalski, Solid-State Electronics, Vol. 80, No. 2013, doi:10.1016/j.sse.2012.10.021
“Electroluminescence analysis and simulation of the effects of injection and temperature on carrier distribution in InGaN-based light-emitting diodes with color-coded quantum wells”,
M. Meneghini, S. Vaccari, A. Garbujo, N. Trivellin, D. Zhu, C. J. Humphreys, et al., Japanese Journal of Applied Physics, Vol. 52, No. 8S, 2013, doi:10.7567/JJAP.52.08JG09
“Identifying the cause of the efficiency droop in GaInN light-emitting diodes by correlating the onset of high injection with the onset of the efficiency droop”,
D. S. Meyaard, G.-B. Lin, J. Cho, E. F. Schubert, H. Shim, S.-H. Han, et al., Applied Physics Letters, Vol. 102, No. 25, 2013, doi:10.1063/1.4811558
“Breaking the carrier injection bottleneck of phosphor-free nanowire white light-emitting diodes”,
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“Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layer”,
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“Inverse thermal lens effects on the far-field blooming of broad area laser diodes”,
J. Piprek, Photonics Technology Letters, IEEE, Vol. 25, No. 10, 2013, doi:10.1109/LPT.2013.2255590
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J. Piprek, Optical and Quantum Electronics, Vol. 45, No. 7, 2013, doi:10.1007/s11082-012-9640-6
“Self-consistent far-field blooming analysis for high-power Fabry-Perot laser diodes”,
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“What is the problem with GaN-based VCSELs?”,
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N. Wang, T. Mei, X. Yang, H. Li, N. Zhu, and M. Zhang, Japanese Journal of Applied Physics, Vol. 52, No. 11R, 2013, doi:10.7567/JJAP.52.112102
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T.-H. Wang and J.-L. Xu, Optik-International Journal for Light and Electron Optics, Vol. 124, No. 22, 2013, doi:10.1016/j.ijleo.2013.04.065
“Advantage of InGaN-based light-emitting diodes with trapezoidal electron blocking layer”,
T.-H. Wang and J.-L. Xu, Materials Science in Semiconductor Processing, Nov. 2013, doi:10.1016/j.mssp.2013.10.026
“Optical properties of ultra-thin InN layer embedded in InGaN matrix for light emitters”,
Y. Wei, W. Yi-Yang, L. Ning-Yang, L. Lei, C. Zhao, and H. Xiao-Dong, Chinese Physics B, Vol. 22, No. 4, 2013, doi:10.1088/1674-1056/22/4/047801
“Effects of a prestrained InGaN interlayer on the emission properties of InGaN/GaN multiple quantum wells in a laser diode structure”,
C. Wen-Yu, H. Yong-Fa, C. Zhao, Y. Wei, D. Wei-Min, and H. Xiao-Dong, Chinese Physics B, Vol. 22, No. 7, 2013, doi:10.1088/1674-1056/22/7/076803
“Effect of multiquantum barriers in performance enhancement of GaN-based light-emitting diodes”,
C. S. Xia, Z. S. Li, Z. Li, and Y. Sheng, Applied Physics Letters, Vol. 102, No. 1, 2013, doi:10.1063/1.4774091
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C. S. Xia, Z. S. Li, and Y. Sheng, Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on, doi:10.1109/NUSOD.2013.6633113
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C. S. Xia, Z. S. Li, and Y. Sheng, Applied Physics Letters, Vol. 103, No. 23, 2013, doi:10.1063/1.4839417
“Simulation of InGaN/GaN light-emitting diodes with a non-local quantum well transport model”,
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“Efficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer inserted in the GaN barriers”,
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“Investigation of blue InGaN light-emitting diodes with p-AlGaN/InGaN superlattice interlayer”,
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“Investigation of blue InGaN light-emitting diodes with AlGaN barriers of the increasing Al composition”,
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“Advantage of tapered and graded AlGaN electron blocking layer in InGaN‐based blue laser diodes”,
W. Yang, D. Li, J. He, and X. Hu, physica status solidi (c), Vol. 10, No. 3, 2013, doi:10.1002/pssc.201200637
“Efficient collection of photogenerated carriers by inserting double tunnel junctions in III-nitride pin solar cells”,
Y.-C. Yao, M.-T. Tsai, C.-Y. Huang, T.-Y. Lin, J.-K. Sheu, and Y.-J. Lee, Applied Physics Letters, Vol. 103, No. 19, 2013, doi:10.1063/1.4829443
“Design of spectral crosstalk suppressing structure in two-color HgCdTe infrared focal plane arrays detector”,
Z. Ye, P. Zhang, Y. Li, Y. Chen, S. Zhou, Y. Huang, et al., Optical and Quantum Electronics, Nov. 2013, doi:10.1007/s11082-013-9850-6
“InGaN-based vertical light-emitting diodes with acid-modified graphene transparent conductor and highly reflective membrane current blocking layer ”,
X. Yi, H. Zhu, G. Wang, L. Wang, Y. Zhang, X. Li, et al., March 2013, doi:10.1098/rspa.2012.0652
“Design and analysis of high-temperature operating 795 nm VCSELs for chip-scale atomic clocks”,
J. Zhang, Y. Ning, Y. Zeng, J. Zhang, J. Zhang, X. Fu, et al., Laser Physics Letters, Vol. 10, No. 4, 2013, doi:10.1088/1612-2011/10/4/045802
“High temperature operating (> 80° C) 795-nm VCSEL based on InAlGaAs MQWs active region”,
J. Zhang, Y. Ning, J. Zhang, X. Zhang, and L. Wang, ISPDI 2013-Fifth International Symposium on Photoelectronic Detection and Imaging, doi:10.1117/12.2032212
“The advantages of AlGaN-based UV-LEDs inserted with a p-AlGaN layer between the EBL and active region”,
J. Zhang, W. Tian, F. Wu, W. Yan, H. Xiong, J. Dai, et al., Aug. 2013, doi:10.1109/JPHOT.2013.2278520
“Asymmetric Heterostructure with Broad Waveguide for 1.06μm Range High-Power Laser Diodes”,
Y. ZHANG, T. LI, E. HAO, R. CHEN, and Y. WANG, Nanophotonics, Nanoelectronics and Nanosensor 2013, doi:10.1364/N3.2013.NSa3A.32
“Effects of light extraction efficiency to the efficiency droop of InGaN-based light-emitting diodes”,
Y. Zhang, H. Zheng, E. Guo, Y. Cheng, J. Ma, L. Wang, et al., Journal of Applied Physics, Vol. 113, No. 1, 2013, doi:10.1063/1.4772669
“On the effect of step-doped quantum barriers in InGaN/GaN light emitting diodes”,
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“Improvement of carrier distribution in dual wavelength light-emitting diodes”,
S. Zhao, W. Tongbo, Z. Ning, M. Jun, W. Junxi, and L. Jinmin, Journal of Semiconductors, Vol. 34, No. 5, 2013, doi:10.1088/1674-4926/34/5/054008
“Analysis of the subthreshold characteristics of vertical tunneling field effect transistors”,
H. Zhongfang, R. Guoping, and R. Gang, Journal of Semiconductors, Vol. 34, No. 1, 2013, doi:10.1088/1674-4926/34/1/014002
“Optimized Design and Performance Research of the High-Voltage LEDs Chipset”,
M. J. Zhu, H. Y. Huang, Z. Y. Guo, and D. X. Cao, Applied Mechanics and Materials, Vol. 389, No. 2013, doi:10.4028/www.scientific.net/AMM.389.383
2012
“Parametric optimization on optical properties of long-wavelength GaInNAs quantum well lasers”,
M. Alias, F. Maskuriy, F. Faiz, and S. Mitani, Photonics (ICP), 2012 IEEE 3rd International Conference on, doi:10.1109/ICP.2012.6379888
“Design and fabrication of long-wavelength GaInNAs quantum well edge-emitting lasers”,
M. Alias, F. Maskuriy, F. Faiz, and S. Mitani, Computer Applications and Industrial Electronics (ISCAIE), 2012 IEEE Symposium on, doi:10.1109/ISCAIE.2012.6482065
“Multiple-bandgap vertical-junction architectures for ultra-efficient concentrator solar cells”,
A. Braun, A. Vossier, E. A. Katz, N. J. Ekins-Daukes, and J. M. Gordon, Energy Environ. Sci., Vol. 5, No. 9, 2012, doi:10.1039/C2EE22167E
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“Project-Based Learning with an Online Peer Assessment System in a Photonics Instruction for Enhancing LED Design Skills”,
S.-H. Chang, T.-C. Wu, Y.-K. Kuo, and L.-C. You, Turkish Online Journal of Educational Technology-TOJET, Vol. 11, No. 4, 2012,
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“Modeling the optical and electrical response of nanostructured III V solar cells”,
K. Driscoll and S. Hubbard, Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE, doi:10.1109/PVSC.2012.6318211
“Physical model of an optical memory cell with coupling quantum dots”,
L. Fan and F. Guo, Numerical Simulation of Optoelectronic Devices (NUSOD), 2012 12th International Conference on, doi:10.1109/NUSOD.2012.6316505
“GaInAsP/InP Lateral Current Injection Laser With Uniformly Distributed Quantum-Well Structure”,
M. Futami, T. Shindo, T. Koguchi, K. Shinno, T. Amemiya, N. Nishiyama, et al., Photonics Technology Letters, IEEE, Vol. 24, No. 11, 2012, doi:10.1109/LPT.2012.2190053
“The simulation analysis of GaInAsP/GaInP diode lasers emitting at 808 nm”,
K. Gai, L. Li, J. Zhao, Y. Wang, T. Li, P. Lu, et al., Optoelectronics and Microelectronics (ICOM), 2012 International Conference on, doi:10.1109/ICoOM.2012.6316236
“An AlGaN/GaN HEMT with a reduced surface electric field and an improved breakdown voltage”,
X. Gang, E. Xu, N. Hashemi, Z. Bo, F. Y. Fu, and W. T. Ng, Chinese Physics B, Vol. 21, No. 8, 2012, doi:10.1088/1674-1056/21/8/086105
“Electrical, spectral and optical performance of yellow green and amber micro-pixelated InGaN light-emitting diodes”,
Z. Gong, N. Liu, Y. Tao, D. Massoubre, E. Xie, X. Hu, et al., Semiconductor Science and Technology, Vol. 27, No. 1, 2012, doi:10.1088/0268-1242/27/1/015003
“AlInAs selective oxidation for GaInAsP/Si hybrid semiconductor laser using surface activated bonding”,
Y. Hayashi, R. Osabe, K. Fukuda, N. Nishiyama, and S. Arai, Low Temperature Bonding for 3D Integration (LTB-3D), 2012 3rd IEEE International Workshop on, doi:10.1109/LTB-3D.2012.6238058
“Efficiency enhancement of InGaN based blue light emitting diodes with InGaN/GaN multilayer barriers”,
T. Jin-Hui, L. Shu-Ti, L. Tai-Ping, L. Chao, W. Hai-Long, W. Le-Juan, et al., Chinese Physics B, Vol. 21, No. 11, 2012, doi:10.1088/1674-1056/21/11/118502
“On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer”,
Z. Ju, S. T. Tan, Z.-H. Zhang, Y. Ji, Z. Kyaw, Y. Dikme, et al., Applied Physics Letters, Vol. 100, No. 12, 2012, doi:10.1063/1.3694054
“Modeling of InGaAs/InAlAs/InP avalanche photodiodes with undepleted absorber”,
J. Kaniewski, J. Jurenczyk, D. Zak, and J. Muszalski, 18th Czech-Polish-Slovak Optical Conference on Wave and Quantum Aspects of Contemporary Optics, 2012, doi:10.1117/12.2007245
“Quantum efficiency enhancement in selectively transparent silicon thin film solar cells by distributed Bragg reflectors”,
M. Kuo, J. Hsing, T. Chiu, C. Li, W. Kuo, T. Lay, et al., Optics express, Vol. 20, No. 106, 2012, doi:10.1364/OE.20.00A828
“Modeling and optimization of sub-wavelength grating nanostructures on Cu (In, Ga) Se2 solar cell”,
S.-Y. Kuo, M.-Y. Hsieh, F.-I. Lai, Y.-K. Liao, M.-H. Kao, and H.-C. Kuo, Japanese Journal of Applied Physics, Vol. 51, No. 10S, 2012, doi:10.1143/JJAP.51.10NC14
“Advantages of near‐ultraviolet light‐emitting diodes with polarization‐matched InGaN/AlGaInN multi‐quantum wells”,
Y. K. Kuo, Y. H. Chen, J. Y. Chang, and M. C. Tsai, physica status solidi (a), Vol. 209, No. 10, 2012, doi:10.1002/pssa.201228274
“Numerical study of the effects of hetero-interfaces, polarization charges, and step-graded interlayers on the photovoltaic properties of (0001) face GaN/InGaN pin solar cell”,
Y.-K. Kuo, J.-Y. Chang, and Y.-H. Shih, Quantum Electronics, IEEE Journal of, Vol. 48, No. 3, 2012, doi:10.1109/JQE.2011.2181972
“Numerical analysis on the effects of bandgap energy and polarization of electron blocking layer in near-ultraviolet light-emitting diodes”,
Y.-K. Kuo, Y.-H. Chen, J.-Y. Chang, and M.-C. Tsai, Applied Physics Letters, Vol. 100, No. 4, 2012, doi:10.1063/1.3679180
“Numerical study of (0001) face GaN/InGaN pin solar cell with compositional grading configuration”,
Y.-K. Kuo, B.-C. Lin, J.-Y. Chang, F.-M. Chen, and H.-C. Kuo, Photonics Technology Letters, IEEE, Vol. 24, No. 12, 2012, doi:10.1109/LPT.2012.2192723
“Polarization Effect on the Photovoltaic Characteristics of Superlattice Solar Cells”,
Y.-K. Kuo, H.-W. Lin, J.-Y. Chang, Y.-H. Chen, and Y.-A. Chang, Electron Device Letters, IEEE, Vol. 33, No. 8, 2012, doi:10.1109/LED.2012.2200229
“Blue InGaN light-emitting diodes with multiple GaN-InGaN barriers”,
Y.-K. Kuo, T.-H. Wang, and J.-Y. Chang, Quantum Electronics, IEEE Journal of, Vol. 48, No. 7, 2012, doi:10.1109/JQE.2012.2192717
“Advantages of blue InGaN light-emitting diodes with InGaN-AlGaN-InGaN barriers”,
Y.-K. Kuo, T.-H. Wang, and J.-Y. Chang, Applied Physics Letters, Vol. 100, No. 3, 2012, doi:10.1063/1.3678341
“Slightly-doped step-like electron-blocking layer in InGaN light-emitting diodes”,
Y.-K. Kuo, T.-H. Wang, J.-Y. Chang, and J.-D. Chen, Photonics Technology Letters, IEEE, Vol. 24, No. 17, 2012, doi:10.1109/LPT.2012.2207381
“Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers”,
W. Le-Juan, L. Shu-Ti, L. Chao, W. Hai-Long, L. Tai-Ping, Z. Kang, et al., Chinese Physics B, Vol. 21, No. 6, 2012, doi:10.1088/1674-1056/21/6/068506
“Numerical simulation of high-efficiency InGaP/GaAs/InGaAs triple-junction solar cells grown on GaAs substrate”,
J. Liang, W. Hu, X. Chen, C. Xia, and L. Cheng, Numerical Simulation of Optoelectronic Devices (NUSOD), 2012 12th International Conference on, doi:10.1109/NUSOD.2012.6316494
“Efficiency and droop improvement in InGaN/GaN light-emitting diodes by selectively carrier-distribution manipulation”,
D.-W. Lin, C.-H. Wang, S.-P. Chang, P.-H. Ku, Y.-P. Lan, H.-C. Kuo, et al., CLEO: Science and Innovations, 2012, doi:10.1143/APEX.5.042101
“Study of blue InGaN multiple quantum wells light-emitting diodes with p-type quantum barriers”,
C. Liu, T. Lu, Z. Ren, X. Chen, B. Zhao, Y. Yin, et al., Asia Communications and Photonics Conference, 2012
“Influence of the p-doping distribution in GaN barriers on the performance of blue light-emitting diodes”,
C. Liu, T. Lu, Z. Ren, X. Chen, B. Zhao, Y. Yin, et al., Communications and Photonics Conference (ACP), 2012 Asia, 2012
“Enhanced performance of blue light-emitting diodes with InGaN/GaN superlattice as hole gathering layer”,
C. Liu, T. Lu, L. Wu, H. Wang, Y. Yin, G. Xiao, et al., Photonics Technology Letters, IEEE, Vol. 24, No. 14, 2012, doi:10.1109/LPT.2012.2202104
“Characteristics of InGaN quantum wells light-emitting diodes with thin AlGaInN barrier layers”,
G. Liu, J. Zhang, C.-K. Tan, and N. Tansu, Photonics Conference (IPC), 2012 IEEE, doi:10.1109/IPCon.2012.6358677
“Conduction Band Offset of InGaN/AlInGaN Quantum Wells Studied by Deep Level Transient Spectroscopic Technique”,
L. Lu, S. Su, C.-C. Ling, S. Xu, D. Zhao, J. Zhu, et al., Applied Physics Express, Vol. 5, No. 9, 2012, doi:10.1143/APEX.5.091001
“Advantages of GaN based light-emitting diodes with a p-InGaN hole reservoir layer”,
T. Lu, S. Li, C. Liu, K. Zhang, Y. Xu, J. Tong, et al., Applied Physics Letters, Vol. 100, No. 14, 2012, doi:10.1063/1.3700722
“Reduction of efficiency droop in GaInN/GaN light-emitting diodes with thick AlGaN cladding layers”,
A. Mao, J. Cho, E. F. Schubert, J. K. Son, C. Sone, W. J. Ha, et al., Electronic Materials Letters, Vol. 8, No. 1, 2012, doi:10.1007/s13391-011-0780-9
“Measurement of internal electric field in GaN-based light-emitting diodes”,
S.-I. Park, J.-I. Lee, D.-H. Jang, H.-S. Kim, D.-S. Shin, H.-Y. Ryu, et al., Quantum Electronics, IEEE Journal of, Vol. 48, No. 4, 2012, doi:10.1109/JQE.2012.2186610
“Self-consistent electro-thermal-optical simulation of thermal blooming in broad-area lasers”,
J. Piprek, Numerical Simulation of Optoelectronic Devices (NUSOD), 2012 12th International Conference on, doi:10.1109/NUSOD.2012.6316546
“AlGaN polarization doping effects on the efficiency of blue LEDs”,
J. Piprek, SPIE OPTO 2012, doi:10.1117/12.904744
“Ultra-violet light-emitting diodes with quasi acceptor-free AlGaN polarization doping”,
J. Piprek, Optical and Quantum Electronics, Vol. 44, No. 3-5, 2012, doi:10.1007/s11082-011-9509-0
“Effect of ridge waveguide etch depth on laser threshold of InGaN MQW laser diodes”,
L. Redaelli, M. Martens, J. Piprek, H. Wenzel, C. Netzel, A. Linke, et al., SPIE OPTO 2012, doi:10.1117/12.908368
“Effect of internal polarization fields in InGaN/GaN multiple-quantum wells on the efficiency of blue light-emitting diodes”,
H.-Y. Ryu, Japanese Journal of Applied Physics, Vol. 51, No. 9S2, 2012, doi:10.1143/JJAP.51.09MK03
“Simulation of the effects of AlGaN electron-blocking layers on the characteristics of InGaN blue light-emitting diodes”,
H.-Y. Ryu and S.-H. Lee, Journal of the Korean Physical Society, Vol. 61, No. 9, 2012, doi:10.3938/jkps.61.1395
“Design and analysis of 250-nm AlInN laser diodes on AlN substrates using tapered electron blocking layers”,
M. M. Satter, H.-J. Kim, Z. Lochner, J.-H. Ryou, S.-C. Shen, R. D. Dupuis, et al., Quantum Electronics, IEEE Journal of, Vol. 48, No. 5, 2012, doi:10.1109/JQE.2012.2190496
“Model characterization of heterojunction bipolar transistor InP/InGaAs optoelectronic mixer”,
N. Shaharuddin, S. Idrus, and S. Isaak, Photonics (ICP), 2012 IEEE 3rd International Conference on, doi:10.1109/ICP.2012.6379881
“Characterisation of InP/InGaAs heterojunction bipolar transistor as an optoelectronic mixer”,
N. A. Shaharuddin, S. M. Idrus, S. Isahak, and N. Zulkifli, Communications (APCC), 2012 18th Asia-Pacific Conference on, doi:10.1109/APCC.2012.6388266
“Performance characterization of heterojunction bipolar transistor as an optoelectronic mixer”,
N. A. Shaharuddin, S. M. Idrus, N. Mohamed, A. Bakar, A. Bakar, and S. Isaak, Jurnal Teknologi (Sciences & Engineering), Special Edition, Vol. 54, No. a, 2012, doi:10.11113/jt.v58.2553
“Improvement of blue light-emitting diodes with an undoped graded layer as the electrons tunneling barrier layer”,
W. Tian, W. Yan, H. Xiong, Y. Ding, Y. Li, S. Li, et al., Information Optoelectronics, Nanofabrication and Testing, 2012, doi:10.1364/IONT.2012.ITh4A.20
“Improved efficiency droop characteristics in an InGaN/GaN light-emitting diode with a novel designed last barrier structure”,
W. Tian-Hu and X. Jin-Liang, Chinese Physics B, Vol. 21, No. 12, 2012, doi:10.1088/1674-1056/21/12/128504
“Droop improvement in blue InGaN light emitting diodes with AlGaN/InGaN superlattice barriers”,
J. Tong and S. Li, Asia Communications and Photonics Conference, 2012
“Adv. Optoelectron. Technol. Inc., Hsinchu, Taiwan”,
P.-M. Tu, S.-C. Huang, Y.-w. Lin, S.-K. Yang, C.-P. Hsu, J.-R. Chang, et al., Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on, doi:10.1109/SMElec.2012.6417176
“Simulation and analysis of 980nm intracavity-contacted VCSEL”,
L. Wan, Y. Feng, P. Xu, G. Jin, Y. Zhao, and Y. Zhao, Optoelectronics and Microelectronics (ICOM), 2012 International Conference on, doi:10.1109/ICoOM.2012.6316234
“Efficiency and Droop Improvement in InGaN/GaN Light-Emitting Diodes by Selective Carrier Distribution Manipulation”,
C.-H. Wang, S.-P. Chang, P.-H. Ku, Y.-P. Lan, C.-C. Lin, H.-C. Kuo, et al., Applied Physics Express, Vol. 5, No. 4, 2012, doi:10.1143/APEX.5.042101
“Efficiency enhancement of blue InGaN light-emitting diodes with shallow first well”,
T.-H. Wang and Y.-K. Kuo, Photonics Technology Letters, IEEE, Vol. 24, No. 22, 2012, doi:10.1109/LPT.2012.2220131
“High power asymmetric 980nm broad-waveguide diode lasers with current blocking layer”,
Y. Wang, T. Li, R. Chen, Y. Zhang, G. Liu, and E. Hao, Optoelectronics and Microelectronics (ICOM), 2012 International Conference on, doi:10.1109/ICoOM.2012.6316232
“Effects of Spontaneous and Piezoelectric Polarization on Spontaneous Emission Rate of Blue LEDs on SiC Substrates”,
Y. F. Wang, Advanced Materials Research, Vol. 383, No. 2012, doi:10.4028/www.scientific.net/AMR.383-390.6897
“Optimal number of quantum wells for blue InGaN/GaN light-emitting diodes”,
C. S. Xia, Z. S. Li, Z. Li, Y. Sheng, Z. H. Zhang, W. Lu, et al., Applied Physics Letters, Vol. 100, No. 26, 2012, doi:10.1063/1.4731625
“Two-dimensional modeling of CdZnTe/Si based dual and triple junction solar cells”,
Y. Xiao, Z. Li, M. Lestrade, and Z. S. Li, SPIE OPTO 2012, doi:10.1117/12.906803
“Improved Efficiency Droop in a GaN-Based Light-Emitting Diode with an AlInN Electron-Blocking Layer”,
W. Xiao-Xia, Y. Xiao-Dong, H. Miao, L. Yang, W. Geng, L. Ping-Yuan, et al., Chinese Physics Letters, Vol. 29, No. 9, 2012, doi:10.1088/0256-307X/29/9/097304
“Breakdown voltage enhancement for power AlGaN/GaN HEMTs with Air-bridge Field Plate”,
G. Xie, E. Xu, J. Lee, N. Hashemi, W. Ng, B. Zhang, et al., Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on, doi:10.1109/ISPSD.2012.6229090
“Breakdown-voltage-enhancement technique for RF-based AlGaN/GaN HEMTs with a source-connected air-bridge field plate”,
G. Xie, E. Xu, J. Lee, N. Hashemi, B. Zhang, F. Y. Fu, et al., Electron Device Letters, IEEE, Vol. 33, No. 5, 2012, doi:10.1109/LED.2012.2188492
“Advantage of dual wavelength light-emitting diodes with dip-shaped quantum wells”,
Y. Xu, G. Fan, D. Zhou, X. Li, T. Lu, F. Zhao, et al., Chinese Science Bulletin, Vol. 57, No. 20, 2012, doi:10.1007/s11434-012-5211-2
“Improved color rendering of phosphor-converted white light-emitting diodes with dual-blue active layers and n-type AlGaN layer”,
Q.-R. Yan, Y. Zhang, S.-T. Li, Q.-A. Yan, P.-P. Shi, Q.-L. Niu, et al., Optics letters, Vol. 37, No. 9, 2012, doi:10.1364/OL.37.001556
“Si PIN diodes for detecting photoluminescence of NAPDH and riboflavin”,
H. Yang, Y. Qu, T. Li, Z. Zhao, S. Yu, L. Liu, et al., Optoelectronics and Microelectronics (ICOM), 2012 International Conference on, doi:10.1109/ICoOM.2012.6316337
“Crosstalk suppressing design of GaAs microlenses integrated on HgCdTe infrared focal plane arrays”,
Z. Ye, Y. Li, C. Lin, X. Hu, R. Ding, and L. He, Numerical Simulation of Optoelectronic Devices (NUSOD), 2012 12th International Conference on, doi:10.1007/s11082-012-9651-3
“Design and Fabrication of Integrated Electroabsorption Modulated Laser”,
Y.-C. Yu, Ph.D. Thesis, 2012, National Taiwan University of Science and Technology
“CIGS solar cell on flexible stainless steel substrate fabricated by sputtering method: Simulation and experimental results”,
R. Zhang, D. R. Hollars, and J. Kanicki, Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on,
“Performance enhancement of blue light-emitting diodes without an electron-blocking layer by using special designed p-type doped InGaN barriers”,
Y.-Y. Zhang, G.-H. Fan, Y.-A. Yin, and G.-R. Yao, Optics express, Vol. 20, No. 101, 2012, doi:10.1364/OE.20.00A133
“Performance Enhancement of Blue Light-Emitting Diodes Without an Electron-Blocking Layer by Using p-Type Doped Barriers and a Hole-Blocking Layer of Low Al Mole Fraction”,
Y.-Y. Zhang, G.-H. Fan, and T. Zhang, Quantum Electronics, IEEE Journal of, Vol. 48, No. 2, 2012, doi:10.1109/JQE.2011.2167600
“Performance enhancement of near-UV light-emitting diodes with an InAlN/GaN superlattice electron-blocking layer”,
Y.-Y. Zhang, X.-L. Zhu, Y.-A. Yin, and J. Ma, Electron Device Letters, IEEE, Vol. 33, No. 7, 2012, doi:10.1109/LED.2012.2197593
“Efficiency droop alleviation in blue light emitting diodes using the InGaN/GaN triangular-shaped quantum well”,
C. Zhao, Y. Wei, L. Lei, W. Cheng-Hao, L. Lei, H. Yong-Fa, et al., Chinese Physics B, Vol. 21, No. 10, 2012, doi:10.1088/1674-1056/21/10/108505
“The design of short wavelength light emitting diodes”,
Z. Zhao, Q. Y. L. Te, Y. Hao, Y. Shuai, L. Lei, T. Chao-qun, et al., Optoelectronics and Microelectronics (ICOM), 2012 International Conference on, doi:10.1109/ICoOM.2012.6316235
2011
“Correlation of barrier material and quantum‐well number for InGaN/(In) GaN blue light‐emitting diodes”,
J. Y. Chang, Y. K. Kuo, and M. C. Tsai, physica status solidi (a), Vol. 208, No. 3, 2011, doi:10.1002/pssa.201026369
“Comment on “The impact of piezoelectric polarization and nonradiative recombination on the performance of (0001) face GaN-InGaN photovoltaic devices”[Appl. Phys. Lett. 96, 051107 (2010)]”,
J.-Y. Chang and Y.-K. Kuo, Applied Physics Letters, Vol. 98, No. 3, 2011, doi:10.1063/1.3544929
“Numerical investigation on the enhanced carrier collection efficiency of Ga-face GaN/InGaN pin solar cells with polarization compensation interlayers”,
J.-Y. Chang, B.-T. Liou, H.-W. Lin, Y.-H. Shih, S.-H. Chang, and Y.-K. Kuo, Optics letters, Vol. 36, No. 17, 2011, doi:10.1364/OL.36.003500
“A Simulation-Based LED Design Project in Photonics Instruction Based on Industry University Collaboration”,
S.-H. Chang, M.-L. Chen, Y.-K. Kuo, and Y.-C. Shen, Education, IEEE Transactions on, Vol. 54, No. 4, 2011, doi:10.1109/TE.2010.2098877
“Study of InGaN/GaN/InGaN multi-layer barrier in GaN-based light emitting diode”,
L. Cheng, C. Xu, Y. Sheng, W. Hu, W. Lu, and Z. Li, Numerical Simulation of Optoelectronic Devices (NUSOD), 2011 11th International Conference on, Vol. No. 2011, doi:10.1109/NUSOD.2011.6041121
“Simulation for light power distribution of 3D InGaN/GaN MQW LED with textured surface”,
L.-W. Cheng, Y. Sheng, C.-S. Xia, W. Lu, M. Lestrade, and Z.-M. Li, Optical and quantum electronics, Vol. 42, No. 11-13, 2011, doi:10.1109/NUSOD.2010.5595695
“Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate”,
C.-H. Chiu, D.-W. Lin, Z.-Y. Li, S.-C. Ling, H.-C. Kuo, T.-C. Lu, et al., SPIE OPTO, Vol. No. 2011, doi:10.1117/12.876656
“Reduction of Efficiency Droop in Semipolar (1101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates”,
C.-H. Chiu, D.-W. Lin, C.-C. Lin, Z.-Y. Li, W.-T. Chang, H.-W. Hsu, et al., Applied physics express, Vol. 4, No. 1, 2011, doi:10.1143/APEX.4.012105
“Design of a Coupled Quantum Well Modulator with Enhanced Modulation Efficiency”,
B. A. Clare, K. A. Mudge, and K. J. Grant, Conference on Lasers and Electro-Optics/Pacific Rim, Vol. No. 2011, doi:10.1109/IQEC-CLEO.2011.6193826
“Effects of quantum wells position and background doping on the performance of multiple quantum well solar cells”,
H. Fujii, Y. Wang, Y. Nakano, and M. Sugiyama, Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE, Vol. No. 2011, doi:10.1109/PVSC.2011.6186482
“Effects of dislocation density on injection and temperature sensitivity of InGaN LED emission spectra: a combined experimental and simulation approach”,
M. Goano, S. Chiaria, M. Calciati, F. Bertazzi, G. Ghione, M. Meneghini, et al., International Conference on Nitride Semiconductors, 9th (ICNS-9), Vol. No. 2011,
“Theoretical study of GaN interval layers and quantum well barrier layers of different doping types in dual-wavelength LED [J]”,
Z. Y.-Y. F. Guan-Han, Acta Physica Sinica, Vol. 1, No. 2011,
“A simulation study of vertical tunnel field effect transistors”,
Z.-F. Han, G.-P. Ru, and G. Ruan, ASIC (ASICON), 2011 IEEE 9th International Conference on, Vol. No. 2011, doi:10.1109/ASICON.2011.6157293
“Optimum design of InGaP/GaAs/Ge triple-junction solar cells with sub-wavelength surface texture structure”,
P.-H. Huang, H. W. Wang, M.-A. Tsai, F.-l. Lai, S.-Y. Kuo, H. Kuo, et al., Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE, Vol. No. 2011, doi:10.1109/PVSC.2011.6186360
“Top-Emitting Organic Light-Emitting Diodes With Step-Doped Emission Layers”,
Y.-H. Huang, B.-T. Liou, J.-D. Chen, and Y.-K. Kuo, Photonics Technology Letters, IEEE, Vol. 23, No. 8, 2011, doi:10.1109/LPT.2011.2110641
“Numerical Simulation of Single-Junction In Ga P Solar Cell With Compositional Grading Configuration”,
Y.-K. Kuo, B.-C. Lin, J.-Y. Chang, and Y.-A. Chang, Photonics Technology Letters, IEEE, Vol. 23, No. 12, 2011, doi:10.1109/LPT.2011.2140100
“Improvement in electron overflow of near-ultraviolet InGaN LEDs by specific design on last barrier”,
Y.-K. Kuo, Y.-H. Shih, M.-C. Tsai, and J.-Y. Chang, Photonics Technology Letters, IEEE, Vol. 23, No. 21, 2011, doi:10.1109/LPT.2011.2165838
“Advantages of InGaN light-emitting diodes with GaN-InGaN-GaN barriers”,
Y.-K. Kuo, T.-H. Wang, J.-Y. Chang, and M.-C. Tsai, Applied Physics Letters, Vol. 99, No. 9, 2011, doi:10.1063/1.3633268
“Optimization of multiple quantum well structure for GaN-based blue light emitting diode”,
L. Lei, X. Zeng, Y. Fan, and Y. Zhang, Journal of Optoelectronics Laser, Vol. 22, No. 9, 2011, doi:10.1088/1674-1056/20/3/037807
“Modeling of polarization effects in InGaN PIN solar cells”,
M. Lestrade, Z. Li, Y. Xiao, and Z. S. Li, Optical and quantum electronics, Vol. 42, No. 11-13, 2011, doi:10.1007/s11082-011-9458-7
“3D TCAD Simulation for Semiconductor Processes, Devices and Optoelectronics”,
S. Li and Y. Fu, Springer, 2011, 1461404819
“Simulation of carrier transport in quantum cascade lasers”,
Y. Li, G.-P. Ru, and Y.-Y. Li, ASIC (ASICON), 2011 IEEE 9th International Conference on, Vol. No. 2011, doi:10.1109/ASICON.2011.6157325
“Effects of polarization charge on the photovoltaic properties of InGaN solar cells”,
Z. Li, M. Lestrade, Y. Xiao, and S. Li, physica status solidi (a), Vol. 208, No. 4, 2011, doi:10.1002/pssa.201026489
“Improvement of performance in p-side down InGaN/GaN light-emitting diodes with graded electron blocking layer”,
Z. Li, M. Lestrade, Y. Xiao, and Z. S. Li, Japanese Journal of Applied Physics, Vol. 50, No. 8, 2011, doi:10.1143/JJAP.50.080212
“3D modeling of CMOS image sensor: From process to opto-electronic response”,
Z. S. Li, Y. Xiao, K. Uehara, M. Lestrade, S. Gao, Y. Fu, et al., Electron Devices and Solid-State Circuits (EDSSC), 2011 International Conference of, Vol. No. 2011, doi:10.1109/EDSSC.2011.6117732
“Improvement in viewing angle properties of top-emitting organic light-emitting devices”,
B.-T. Liou, M.-C. Tsai, Y.-H. Huang, F.-M. Chen, Y.-R. Lin, and Y.-K. Kuo, SPIE OPTO, Vol. No. 2011, doi:10.1117/12.874157
“Effect of the thickness of undoped GaN interlayers between multiple quantum wells and the p-doped layer on the performance of GaN light-emitting diodes”,
T. Lu, S. Li, K. Zhang, C. Liu, Y. Yin, L. Wu, et al., Optics express, Vol. 19, No. 19, 2011, doi:10.1364/OE.19.018319
“GaInNAs QW with GaNAs intermediate layer for long wavelength laser”,
F. Maskuriy, M. Alias, S. Mitani, and A. Manaf, Industrial Electronics and Applications (ISIEA), 2011 IEEE Symposium on, Vol. No. 2011, doi:10.1109/ISIEA.2011.6108787
“Low internal loss GaInNAs laser diode with InGaAs/GaNAs/GaAs barrier”,
F. Maskuriy, M. Alias, S. Mitani, and A. Manaf, Photonics (ICP), 2011 IEEE 2nd International Conference on, Vol. No. 2011, doi:10.1109/ICP.2011.6106823
“Dark current characteristics of InAs/GaNAs strain-compensated quantum dot solar cells”,
T. Morioka and Y. Okada, Physica E: Low-dimensional Systems and Nanostructures, Vol. 44, No. 2, 2011, doi:10.1016/j.physe.2011.09.001
“Using measurements of fill factor at high irradiance to deduce heterobarrier band offsets”,
J. Olson, M. Steiner, and A. Kanevce, Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE, Vol. No. 2011, doi:10.1109/PVSC.2011.6186459
“Polarization-doped AlGaN light-emitting diode”,
J. Piprek, Numerical Simulation of Optoelectronic Devices (NUSOD), 2011 11th International Conference on, Vol. No. 2011, doi:10.1109/NUSOD.2011.6041211
“Efficiency and electron leakage characteristics in GaN-based light-emitting diodes without AlGaN electron-blocking-layer structures”,
H.-Y. Ryu, J.-I. Shim, C.-H. Kim, J. H. Choi, H. M. Jung, M.-S. Noh, et al., Photonics Technology Letters, IEEE, Vol. 23, No. 24, 2011, doi:10.1109/LPT.2011.2170409
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L. Tai-Ping, L. Shu-Ti, Z. Kang, L. Chao, X. Guo-Wei, Z. Yu-Gang, et al., Chinese Physics B, Vol. 20, No. 9, 2011, doi:10.1088/1674-1056/20/9/098503
“Blue InGaN light-emitting diodes with dip-shaped quantum wells”,
L. Tai-Ping, L. Shu-Ti, Z. Kang, L. Chao, X. Guo-Wei, Z. Yu-Gang, et al., Chinese Physics B, Vol. 20, No. 10, 2011, doi:10.1088/1674-1056/20/10/108504
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C. Wang, W. Chang, S. Chang, J. Li, H. Kuo, T. Lu, et al., Conference on Lasers and Electro-Optics/Pacific Rim, Vol. No. 2011, doi:10.1109/IQEC-CLEO.2011.6193935
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C. Wang, D. Lin, C. Chiu, S. Chang, Z. Li, J. Li, et al., Proc. of SPIE Vol, Vol. 7954, No. 2011, doi:10.1117/12.874935
“Efficiency Droop Reduction in InGaN/GaN Light-emitting Diodes by Graded-thickness Multiple Quantum Wells”,
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“Efficiency enhancement of blue InGaN LEDs with indium composition graded InGaN barriers”,
T.-H. Wang, J.-Y. Chang, M.-C. Tsai, and Y.-K. Kuo, SPIE OPTO, Vol. No. 2011, doi:10.1117/12.874909
“Equilibrium between spontaneous polarization, piezoelectric polarization and crystal defects for blue LEDs on sapphire substrate”,
Y. Wang, Mechanic Automation and Control Engineering (MACE), 2011 Second International Conference on, Vol. No. 2011, doi:10.1109/MACE.2011.5987179
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L. Wei-Yi, R. Guo-Ping, J. Yu-Long, and R. Gang, Chinese Physics B, Vol. 20, No. 8, 2011, doi:10.1088/1674-1056/20/8/087304
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C. S. Xia, Z. S. Li, W. Lu, Z. H. Zhang, Y. Sheng, and L. W. Cheng, Applied Physics Letters, Vol. 99, No. 23, 2011, doi:10.1063/1.3665252
“Modeling of CdZnTe/CdTe/Si triple junction solar cells”,
Y. Xiao, Z. Li, M. Lestrade, and Z. S. Li, Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE, Vol. No. 2011, doi:10.1109/PVSC.2011.6186215
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Y. Xiao, Z. S. Li, K. Uehara, M. Lestrade, and Z. Li, Microopics Conference (MOC), 2011 17th, Vol. No. 2011,
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G.-f. ZHANG, J.-y. TANG, J.-f. CHEN, F.-c. ZHOU, B.-x. Lin, and J.-j. LIAO, Journal of Functional Materials and Devices, Vol. 6, No. 2011,
“Design and Analysis of High-temperature Operating 795-nm VCSELs for< sup> 87 Rb Based Chip-Scale Atomic Clock”,
J. Zhang, CIOMP-OSA Summer Session: Lasers and Their Applications, Vol. No. 2011, doi:10.1364/SUMSESSION.2011.Tu17
“1550 nm DFB semiconductor lasers with high power and low noise”,
Y.-G. Zhao, A. Nikolov, and R. Dutt, SPIE OPTO, Vol. No. 2011, doi:10.1117/12.873973
“3D Modeling of CMOS Image Sensor: From Process to Opto-Electronic Response”,
Z.M. Simon Li, Y.G. Xiao et. al., 2011 International Conference of Electron Devices and Solid-State Circuits (EDSSC), Tianjin China, 17-18 Nov. 2011, doi:10.1109/EDSSC.2011.6117732
“Breakdown Voltage Enhancement for Power AlGaN/GaN HEMTs with Air-bridge Field Plate”,
Gang Xie, Edward Xu et al., 2011 International Conference of Electron Devices and Solid-State Circuits (EDSSC), Tianjin China, 17-18 Nov. 2011, doi:10.1109/EDSSC.2011.6117720
“Simulation of quantum cascade lasers”,
Z.-M. Simon Li; Ying-Ying Li; Guo-Ping Ru; J. Appl. Phys. 110, 093109 (2011); doi:10.1063/1.3660207
“Investigation of efficiency droop for InGaN-based UV light-emitting diodes with InAlGaN barrier “,
Tu, Po-Min; Chang, Chun-Yen; Huang, Shih-Cheng; Chiu, Ching-Hsueh; Chang, Jet-Rung; Chang, Wei-Ting; Wuu, Dong-Sing; Zan, Hsiao-Wen; Lin, Chien-Chung; Kuo, Hao-Chung and Hsu, Chih-Peng; Applied Physics Letters, Vol. 98, No. 21 (May 2011), doi:10.1063/1.3591967
“MgZnO-based metal-semiconductor-metal solar-blind photodetectors on ZnO substrates”,
Zheng, Qinghong; Huang, Feng; Ding, Kai; Huang, Jin; Chen, Dagui; Zhan, Zhibing and Lin, Zhang;
Applied Physics Letters, Vol. 98 No. 22 (May 2011), doi:10.1063/1.3596479
“Numerical Study on the Influence of Piezoelectric Polarization on the Performance of p-on-n (0001)-Face GaN/InGaN p-i-n Solar Cells”,
Jih-Yuan Chang and Yen-Kuang Kuo, IEEE Electron Device Letters, Vol. 32 No. 7 (July 2011), pp. 937 – 939, doi:10.1109/LED.2011.2150195
“Novel Separate Confinement Heterostructure Design for Long-Wavelength Lasers”,
Yong, Y.S.; Wong, H.Y.; Yow, H.K., IEEE Electron Device Letters, Vol. 32 No. 7 (July 2011), pp. 925 – 927, DOI:10.1109/LED.2011.2147275
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“Performances Comparison of GaN-Based LEDs with Different Electrode Shapes” (GaN基不同電極形的LED性能比較),
Dong Yajuan (董雅娟), Zhang Junbing (張俊兵), Lin Yueming (林岳明), Jin Yuzhe (金豫浙), Wang Shuchang (王書昶) and Zeng Xianghua (曾祥華), SEMICONDUCTOR TECHNOLOGY 2011, 36(3), doi:10.3969/j.issn.1003-353x.2011.03.001
“Thermal simulation of InP-based 1.3 μm vertical cavity surface emitting laser with AsSb-based DBRs “,
Z. Danesh and E. Rajaeia, Optics Communications, Volume 284, Issue 1, 1 January 2011, Pages 330-340, doi:10.1016/j.optcom.2010.08.044
“Invited Paper: Design and modeling of a transistor vertical-cavity surface-emitting laser “,
Wei Shi, Behnam Faraji, Mark Greenberg, Jesper Berggren, Yu Xiang, Mattias Hammar, Michel Lestrade, Zhi-Qiang Li, Z. M. Simon Li and Lukas Chrostowski, Optical and Quantum Electronics, DOI: 10.1007/s11082-011-9444-0
“Design and Simulation of an 808 nm InAlAs/AlGaAs GRIN-SCH Quantum Dot Laser Diode”,
Trevor Chan, Sung-Hun Son, Kyoung-Chan Kim, and Tae-Geun Kim, Journal of the Optical Society of Korea, Vol. 15, Issue 2, pp. 124-127 (2011)
“Temperature performance of the edge emitting transistor laser “,
Song Liang, Hongliang Zhu, Duanhua Kong, Bin Niu, Lingjuan Zhao and Wei Wang, Appl. Phys. Lett. 99, 013503 (2011); doi:10.1063/1.3608384
“Comparison of nitride-based dual-wavelength light-emitting diodes with an InAlN electron-blocking layer and with p-type doped barriers “,
Zhang Yun-Yan ( 炎) and Fan Guang-Han (范广涵), Chinese Phys. B, Vol. 20 No. 4 (2011), doi: 10.1088/1674-1056/20/4/048502
“Far-field characteristics simulation analysis of blue-violet LD”,
Guo Wenwen, Electronic Test, 2011-01, DOI:CNKI:SUN:WDZC.0.2011-01-018
“Numerical Study of Blue InGaN Light-Emitting Diodes With Varied Barrier Thicknesses”,
Miao-Chan Tsai, Sheng-Horng Yen, Ying-Chung Lu, Yen-Kuang Kuo, IEEE Photonics Technology Letters, Jan.15, 2011, Vol. 23 No. 2, pp. 76-78, DOI:10.1109/LPT.2010.2091119
“Effects of polarization charge on the photovoltaic properties of InGaN solar cells”,
Z. Q. Li, M. Lestrade, Y. G. Xiao and S. Li, physica status solidi (a), 208: Apr. 2011, doi:10.1002/pssa.201190012
“Design of Three-terminal GaN Light Emitting HBT for Free Space Communication”,
Shengling Deng and Z.Rena Huang, Conference Paper, Quantum Electronics and Laser Science Conference (QELS), Baltimore (Maryland, USA), May 1, 2011, doi:10.1364/CLEO_AT.2011.JWA92
“Efficiency Droop Reduction in InGaN/GaN Light-emitting Diodes by Graded-thickness Multiple Quantum Wells”,
Chao-Hsun Wang, Wei-Ting Chang, Shih-Pang Chang, Jinchai Li, Hao-chung Kuo, Tien-Chang Lu and Shing-chung Wang, Conference Paper, CLEO: Science and Innovations (CLEO: S and I), Baltimore (Maryland, USA), May 1, 2011, doi:10.1364/CLEO_SI.2011.CWF4
“Deep-ultraviolet light-emitting diodes with gradually increased barrier thicknesses from n-layers to p-layers”,
Miao-Chan Tsai, Sheng-Horng Yen and Yen-Kuang Kuo, Appl. Phys. Lett. 98, 111114 (2011); doi:10.1063/1.3567786
“Effect of current spreading on the efficiency droop of InGaN light-emitting diodes”,
Han-Youl Ryu and Jong-In Shim, Optics Express, Vol. 19, Issue 4, pp. 2886-2894 (2011), doi:10.1364/OE.19.002886
“Design and comparison of GaAs, GaAsP and InGaAlAs quantum-well active regions for 808-nm VCSELs”,
Yan Zhang, Yongqiang Ning, Lisen Zhang, Jinsheng Zhang, Jianwei Zhang, Zhenfu Wang, Jian Zhang, Yugang Zeng, and Lijun Wang, Optics Express, Vol. 19, Issue 13, pp. 12569-12581 (2011), doi:10.1364/OE.19.012569
“Optical Characterization of an Asymmetric Quantum Well Structure for Broadband Laser Array Application”,
Wei-Li Chen, Japanese Journal of Applied Physics, Volume 50, Issue 4, pp. 04DG16-04DG16-4 (2011), DOI: 10.1143/JJAP.50.04DG16
“Investigation of blue InGaN light-emitting diodes with step-like quantum well”,
Miao-Chan Tsai, Sheng-Horng Yen and Yen-Kuang Kuo, Applied Physics A: Materials Science & Processing, Volume 104, Number 2, 621-626, DOI: 10.1007/s00339-011-6458-1
2010
“Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer”,
Wang, C. H.; Ke, C. C.; Lee, C. Y.; Chang, S. P.; Chang, W. T.; Li, J. C.; Li, Z. Y.; Yang, H. C.; Kuo, H. C.; Lu, T. C. and Wang, S. C., Applied Physics Letters, Vol. 97 No. 26 (Dec 2010), doi:10.1063/1.3531753
“Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure “,
Ji Lian, Zhang Shu-Ming, Jiang De-Sheng, Liu Zong-Shun, Zhang Li-Qun, Zhu Jian-Jun, Zhao De-Gang, Duan Li-Hong and Yang Hui, Chinese Physics Letters Vol. 27 No. 5, doi:10.1088/0256-307X/27/5/054204
“High-Saturation-Current Modified Uni-Traveling-Carrier Photodiode With Cliff Layer”,
Zhi Li; Huapu Pan; Hao Chen; Beling, A. and Campbell, J.C., IEEE Journal of Quantum Electronics, Vol. 46 No. 5 (May 2010), pp. 626 – 632, doi:10.1109/JQE.2010.2046140
“Finite element simulations of compositionally graded InGaN solar cells”,
G.F. Brown, J.W. Ager III, W. Walukiewicz and J. Wu, Solar Energy Materials and Solar Cells, Volume 94, Issue 3, March 2010, Pages 478-483, doi:10.1016/j.solmat.2009.11.010
“High frequency response of near-room temperature LWIR HgCdTe heterostructure photodiodes”,
M. Kopytko, K. J wikowski, A. J wikowska and A. Rogalski, Opto-Electronics Review, Volume 18, Number 3, pp. 277-283, DOI: 10.2478/s11772-010-1035-6
“Enhanced numerical analysis of current-voltage characteristics of long wavelength infrared n-on-p HgCdTe photodiodes”,
K. J wikowski, M. Kopytko, A. Rogalski and A. J wikowska, J. Appl. Phys. 108, 074519 (2010); doi:10.1063/1.3483926
“Study of InGaN GaN Light-Emitting Diodes With Different Last Barrier Thicknesses”,
Jun-Rong Chen; Tien-Chang Lu; Hao-Chung Kuo; Fang, K.L.; Huang, K.F.; Kuo, C.W.; Chang, C.J.; Kuo, C.T. and Shing-Chung Wang, IEEE Photonics Technology Letters, Vol. 22 No. 12 (June 15, 2010), pp. 860 – 862, doi:10.1109/LPT.2010.2046483
“SIMULATION AND OPTIMIZATION OF OPTICAL PERFORMANCE OF INP-BASED LONGWAVELENGTH VERTICAL CAVITY SURFACE EMITTING LASER WITH SELECTIVELY TUNNEL JUNCTION APERTURE”,
DANESH KAFTROUDI Z.*,RAJAEI E., JOURNAL OF THEORETICAL AND APPLIED PHYSICS (IRANIAN PHYSICAL JOURNAL) SEPTEMBER 2010; 4(2):12-20
“Investigation of dominant effect on efficiency droop in InGaN light emitting device “,
Kyu Sang Kim, Jin Ha Kim, Young Min Park, Su Jin Jung, Yong Jo Park and S. N. Cho, Appl. Phys. Lett. 97, 031113 (2010); doi:10.1063/1.3467451
“Uncooled MWIR and LWIR photodetectors in Poland”,
J. Piotrowski, J. Pawluczyk, A. Piotrowski, W. Gawron, M. Romanis and K. K os, Opto-Electronics Review, Volume 18, Number 3, 318-327, DOI: 10.2478/s11772-010-1022-y
“Experimental and Theoretical Analysis on GaN Multiple Quantum Well Blue LED”,
Li Weijun, China Light & Lighting 2010-01, doi:CNKI:SUN:ZGZM.0.2010-01-005
“980 nm Vertical Cavity Surface Emitting Laser Temperature-Change Output Characteristics”,
Liang Xuemei, Wang Ye, Qin Li, Li Te, Ning Yongqiang, Wang Lijun, Chinese Journal of Lasers, 2010-01, doi:CNKI:SUN:JJZZ.0.2010-01-017
“Multiple quantum wells GaInNAs for ridge-wave-guide laser diodes”,
Manaf, N.A.A.; Alias, M.S.; Mitani, S.M. and Yahya, M.R., Conference paper: 2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT), Nov. 30 2010-Dec. 2 2010, Melaka (Malaysia), doi:10.1109/IEMT.2010.5746766
“Investigation of Optical Performance of InGaN MQW LED With Thin Last Barrier”,
Sheng-Horng Yen; Meng-Lun Tsai; Miao-Chan Tsai; Shu-Jeng Chang; Yen-Kuang Kuo; IEEE Photonics Technology Letters, Vol. 22 No. 24 (Dec.15 2010), pp. 1787 – 1789, doi: 10.1109/LPT.2010.2085427
“Investigation of wavelength-dependent efficiency droop in InGaN light-emitting diodes”,
J.-R. Chen, Y.-C. Wu, S.-C. Ling, T.-S. Ko, T.-C. Lu, H.-C. Kuo, Y.-K. Kuo and S.-C. Wang, Applied Physics B: Lasers and Optics, Volume 98, Number 4, 779-789, DOI: 10.1007/s00340-009-3856-6
“How shall we put multiple quantum wells in p-i-n structure for efficiency enhancement? “,
Sugiyama, M.; Yunpeng Wang; Soohyeck Choi; Yu Wen; Nakano, Y.; 35th IEEE Photovoltaic Specialists Conference (PVSC), 20-25 June 2010, Honolulu (HI, USA), pp. 000376 – 000379, doi:10.1109/PVSC.2010.5616857
“Systematic study on the confinement structure design of 1.5-μm InGaAlAs/InP multiple-quantum-well lasers “,
Y. S. Yong, H. Y. Wong, H. K. Yow and M. Sorel, Laser Physics, Volume 20, Number 4, pp. 811-815, DOI: 10.1134/S1054660X10070376
“Effect of P-Type Last Barrier on Efficiency Droop of Blue InGaN Light-Emitting Diodes”,
IEEE Journal of Quantum Electronics, Vol. 46 No.8 (Aug. 2010), pp. 1214 – 1220, doi:10.1109/JQE.2010.2045104
“Efficiency droop alleviation in InGaN/GaN light-emitting diodes by graded-thickness multiple quantum wells”,
Wang, C. H.; Chang, S. P.; Chang, W. T.; Li, J. C.; Lu, Y. S.; Li, Z. Y.; Yang, H. C.; Kuo, H. C.; Lu, T. C. and Wang, S. C.; Applied Physics Letters, Nov. 2010, Vol. 97 No. 18, pp. 181101 – 181101-3, doi:10.1063/1.3507891
“Electronic and Optical Properties of Mg_xZn_1－xO and Be_xZn_1－xO Quantum Wells”,
Enrico Furno, Simone Chiaria, Michele Penna, Enrico Bellotti and Michele Goano, Journal of Electronic Materials, Volume 39, Number 7, 936-944, DOI: 10.1007/s11664-010-1163-y
“Modeling study for developing CdZnTe(CdSe)/CIGS tandem solar cells “,
Y. G. Xiao, Z. Q. Li, M. Lestrade, and Z. M. S. Li, Conference Paper: Thin Film Solar Technology II, 1 August 2010, San Diego (California, USA), Proc. SPIE 7771, 77710K (2010); doi:10.1117/12.860958
“Thin-film GaInAsP/InP lateral current injection type Fabry-Perot laser ― Improved quantum efficiency operation”,
Ito, H.; Okumura, T.; Kondo, D.; Nishiyama, N. and Arai, S., 2010 International Conference on Indium Phosphide & Related Materials (IPRM), Kagawa, Japan, May 31 2010-June 4 2010, DOI:10.1109/ICIPRM.2010.5516144
“Advantages of blue InGaN light-emitting diodes with AlGaN barriers”, Jih-Yuan Chang, Miao-Chan Tsai and Yen-Kuang Kuo, Optics Letters, Vol. 35, Issue 9, pp. 1368-1370 (2010), doi:10.1364/OL.35.001368
“Improvement in output power of a 460 nm InGaN light-emitting diode using staggered quantum well”,
Chih-Teng Liao, Miao-Chan Tsai, Bo-Ting Liou, Sheng-Horng Yen and Yen-Kuang Kuo, J. Appl. Phys. 108, 063107 (2010); doi:10.1063/1.3471804
“Enhancement in hole-injection efficiency of blue InGaN light-emitting diodes from reduced polarization by some specific designs for the electron blocking layer”,
Yen-Kuang Kuo, Jih-Yuan Chang, and Miao-Chan Tsai, Optics Letters, Vol. 35, Issue 19, pp. 3285-3287 (2010), doi:10.1364/OL.35.003285
“A route to improved extraction efficiency of light-emitting diodes”,
H. Zhu, C. X. Shan, L. K. Wang, Y. Yang, J. Y. Zhang, B. Yao, D. Z. Shen and X. W. Fan, Appl. Phys. Lett. 96, 041110 (2010); doi:10.1063/1.3301614
“Simulations of laser diodes with nonpolar InGaN multi-quantum-wells”,
Z. Q. Li, Z. M. Simon Li, Joachim Piprek, physica status solidi (c), Special Issue: 8th International Conference on Nitride Semiconductors (ICNS-8), Volume 7, Issue 7-8, pages 2259 2261, July 2010; DOI: 10.1002/pssc.200983541
“Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes”,
Shih-Chun Ling, Tien-Chang Lu, Shih-Pang Chang, Jun-Rong Chen, Hao-Chung Kuo and Shing-Chung Wang, Appl. Phys. Lett. 96, 231101 (2010); doi:10.1063/1.3449557
“Breakdown voltage enhancement for GaN high electron mobility transistors”,
Gang Xie, Bo Zhang; Fred Y. Fu, Ng, W.T., 2010 22nd International Symposium on Power Semiconductor Devices & IC’s (ISPSD’10), Hiroshima, Japan.
“GaN High Electron Mobility Transistors with Localized Mg Doping and Drain Metal Extension”,
Gang Xie, Bo Zhang, Fred Y. Fu and W.T.Ng, 2010 International Conference on Solid-State and Integrated Circuit Technology (ICSICT’10), Shanghai, China.
“3D Simulation of CMOS Image Sensor”,
Yegao (George) Xiao, Fred Y. Fu and Zhanming Simon Li, (CMOSET’10), Whistler, Canada
“Growth and characteristics of GaInN/GaInN multiple quantum well light-emitting diodes”,
W.S. Lee; M.-H. Kim & al., Journal of Applied Physics 107, 063102 (2010)
“Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping”,
Di Zhu (朱迪), Ahmed N. Noemaun, Martin F. Schubert, Jaehee Cho, E. Fred Schubert, Mary H. Crawford and Daniel D. Koleske, Appl. Phys. Lett. 96, 121110 (2010), doi:10.1063/1.3371812
“Design and epitaxy of 1.5 μm InGaAsP-InP MQW material for a transistor laser”,
Z.G. Duan, W. Shi & al., Optics Express, Vol. 18, Issue 2, pp. 1501-1509 (2010)
“Numerical simulation on high-efficiency GaInP/GaAs/InGaAs triple-junction solar cells”,
S.-H. Chang; M.-C. Tsai & al., Physics and Simulation of Optoelectronic Devices XVIII, Proc. SPIE, Vol. 7597, 759721 (2010)
“Stable temperature characteristics of InGaN blue light emitting diodes using AlGaN/GaN/InGaN superlattices as electron blocking layer”,
Kyu Sang Kim; Jin Ha Kim; Su Jin Jung; Yong Jo Park; S. N. Cho; Appl. Phys. Lett. 96, 091104 (2010)
“Role of electron blocking layer in III-nitride laser diodes and light-emitting diodes”,
Physics and Simulation of Optoelectronic Devices XVIII , Proc. SPIE, Vol. 7597, 759720 (2010)
“Effect of polarization state on optical properties of blue-violet InGaN light-emitting diodes”,
Y.-K. Kuo; S.-H. Horng; S.-H. Yen; M.-C. Tsai; M.-F. Huang, Applied Physics A: Materials Science & Processing, Volume 98, Number 3 / March, 2010, pp. 509-515
“Temperature-Dependent Electroluminescence Efficiency in Blue InGaN GaN Light-Emitting Diodes With Different Well Widths”,
Wang, C.H.; Chen, J.R.; Chiu, C.H.; Kuo, H.C.; Li, Y.-L.; Lu, T.C.; Wang, S.C.; Photonics Technology Letters, IEEE, Volume: 22 , Issue: 4, 2010 , Page(s): 236 – 238
“Comprehensive Modeling of Superluminescent Light-Emitting Diodes”,
Li, Z. Q.; Li, Z. M. S.; Quantum Electronics, IEEE Journal of; Volume: 46 , Issue: 4 2010 , Page(s): 454 – 461
“Study on the performance of nano-optoelectronics device: InGaAs/GaAs VLW-QWIP”,
Xiong, D. Y.; Guo, F. M.; Zhang, W. E.; Nanoelectronics Conference (INEC), 2010 3rd International; 2010 , Page(s): 287 – 288
“Research on the photoelectric characteristics of a double barrier structure with quantum dots-quantum well inserted in central well”, Shengwei Zhu; Jianqiang Han; Fan, Lang.; Dayuan Xiong; Fangmin Guo; Nanoelectronics Conference (INEC), 2010 3rd International; 2010 , Page(s): 283 – 284
“Design Criteria for Near-Ultraviolet GaN-Based Light-Emitting Diodes”,
Chiaria, S.; Furno, E.; Goano, M.; Bellotti, E.; Electron Devices, IEEE Transactions on; Volume: 57 , Issue: 1, 2010 , Page(s): 60 – 70
2009
“Advanced 3D simulation of semiconductor devices”,
Yue Fu, George Xiao, Michel Lestrade and Simon Li, 2009 International workshop on CMOS and Emerging Technologies (CMOSET’09), Vancouver, Canada
“Finite element simulations of compositionally graded InGaN solar cells”,
Solar Energy Materials and Solar Cells, Volume 94, Issue 3, March 2010, Pages 478-483
“Single conjugated polymer nanoparticle capacitors”,
R. E. Palacios, K.-J. Lee & al., Chemical Physics, Volume 357, Issues 1-3, 23 February 2009, Pages 21-27
“Theoretical Analysis of the Number of Quantum Well in per Optical Resonance Period in 980nm OPS-VECSEL”,
L. Qin, Z.H. Tian, L.W. Cheng & al., Semiconductor Optoelectronics (2009)
“Theoretical investigation of Auger recombination on internal quantum efficiency of blue light-emitting diodes”,
S.-H. Yen; M.-C. Tsai & al., Applied Physics A: Materials Science & Processing, Volume 97, Number 3 / November, 2009, pp. 705-708
“Reduction of efficiency droop in InGaN-based blue LEDs”
X. Ni; X. Li & al., Gallium Nitride Materials and Devices IV, Proc. of SPIE Vol. 7216 (2009), 72161W1-7
“Investigation of wavelength-dependent efficiency droop in InGaN light-emitting diodes”,
J.-R. Chen, Y.-C. Wu & al., Applied Physics B: Lasers and Optics, Volume 98, Number 4 / March, 2010, pp. 779-789
“Light-assisted deep-trapping of holes in conjugated polymers”,
J.C. Bolinger; L. Fradkin; K.J. Lee; R. E. Palacios; P. F. Barbara, PNAS February 3, 2009 vol. 106 no. 5 1342-1346
“Numerical simulation of blue InGaN light-emitting diodes with polarization-matched AlGaInN electron-blocking layer and barrier layer”,
Y.-K. Kuo; M.-C. Tsai ; S.-H. Yen; Optics Communications Volume 282, Issue 21, 1 November 2009, Pages 4252-4255
“Numerical study of optical properties of InGaN multi-quantum-well laser diodes with polarization-matched AlInGaN barrier layers”,
J.-R. Chen, S.-C. Ling & al., Applied Physics B: Lasers and Optics, Volume 95, Number 1 / April, 2009, Pages 145-153
“2D modeling of silicon based thin film dual and triple junction solar cells”,
Y. G. Xiao; K. Uehara & al, Optics and Photonics 2009, Proc. SPIE, Vol. 7409, 74090F (2009)
“Optimization of electrode shape for high power GaN-based light-emitting diodes”,
Y.P. Fan; L.W. Cheng; Y.M. Lin; J.B. Zhang; X.H. Zeng, Optoelectronics Letters, Volume 5, Number 5 / September, 2009, Pages 337-340
“The design of back surface field layer for a single GaAs solar cell”,
Y. Xiong; K. Tang & al.,Photonics and Optoelectronics Meetings (POEM) 2009, Proceedings of the SPIE, Volume 7518, pp. 751811-751811-6 (2009)
“Low dark current InGaAs/InAlAs/InP avalanche photodiode”,
J Muszalski; J Kaniewski; K Kalinowski;, 2nd National Conference on Nanotechnology ‘NANO 2008’, Journal of Physics: Conference Series 146 (2009) 012028
“Simulation on Crystalline Silicon Solar Cell with Laser-fired Contact (LFC)”,
Sheng, Y.; Xiao, Y.G.; Zhou, Y.J.; Lestrade, M.; Li, Z.Q.; Li, Z.M.S.;, Computational Electronics, 2009. IWCE ’09. 13th International Workshop on; 2009 , Page(s): 1 – 4
“2D modeling of si RCCs with laser-fired contact and surface texture”,
Xiao, Y. G.; Sheng, Y.; Zhou, Y. J.; Lestrade, M.; Li, Z. Q.; Li, Z. M. Simon; Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE, 2009 , Page(s): 001691 – 001695
“Modeling of SI-based thin film triple-junction solar cells”,
Xiao, Y. G.; Uehara, K.; Lestrade, M.; Li, Z. Q.; Li, Z. M. Simon; Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE, 2009 , Page(s): 002154 – 002158
“Numerical investigation of the effect of base doping density in transistor VCSELs”,
Shi, Wei; Faraji, Behnam; Chrostowski, Lukas; Communications and Photonics conference and Exhibition, 2009. ACP 2009. Asia; 2009 , Page(s): 1 – 2
“Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers”,
Kuo, Yen-Kuang; Chang, Jih-Yuan; Tsai, Miao-Chan; Yen, Sheng-Horng; Applied Physics Letters, Volume: 95 , Issue: 1, 2009 , Page(s): 011116 – 011116-3
“Design optimization of GaN-based VCSELs”,
Piprek, J.; Zhan-Ming Li; Numerical Simulation of Optoelectronic Devices, 2009. NUSOD 2009. 9th International Conference on; 2009 , Page(s): 67 – 68
“Evaluating BP Solar’s Mono2 – material: Lifetime and cell electrical data”,
Stoddard, Nathan; Sidhu, Rubin; Creager, Joe; Dey, Soham; Kinsey, Bonnie; Maisano, Lisa; Phillips, Calista; Clark, Roger; Zahler, James; Xie, XianQing; Wu, Tingbin; Jiang, Qingtang; Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE; 2009 , Page(s): 001163 – 001168
“Substrate batch effect in GaAs MESFET under ultra-short pulses”,
Bobreshov, A.M.; Korovchenko, I.S.; Stepkin, V.A.; Uskov, G.K.; Electromagnetic Compatibility, 2009 20th International Zurich Symposium on; 2009 , Page(s): 389 – 392
“Enhancement of Light Power for Blue InGaN LEDs by Using Low-Indium-Content InGaN Barriers”,
Yen-Kuang Kuo; Miao-Chan Tsai; Sheng-Horng Yen; Ta-Cheng Hsu; Yu-Jiun Shen; Selected Topics in Quantum Electronics, IEEE Journal of; Volume: 15 , Issue: 4, 2009 , Page(s): 1115 – 1121
“Effect of In and N incorporation on the GaInNAs VCSELs”,
Abdul Manaf, Nor Azlian; Alias, Mohd Sharizal; Mithani, Sufian Mousa; Yahya, Mohamed Razman; Mat, Abdul Fatah Awang; Communications and Photonics conference and Exhibition, 2009. ACP 2009. Asia; 2009 , Page(s): 1 – 2
“Optoelectronics materials and components characterization for organic inorganic laser assembling”,
Penna, S.; Reale, A.; Beleffi, G.M.T.; Andre, P.S.; Teixeira, A.L.J.; Nakao, M.; Shinada, S.; Wada, N.; OptoElectronics and Communications Conference, 2009. OECC 2009. 14th; 2009 , Page(s): 1 – 2
“Simulations of Optical Properties of a GaN Quantum Dot Embedded in a AlGaN Nanocolumn within a Mixed FEM/atomistic Method”,
Penazzi, G.; Pecchia, A.; Sacconi, F.; Auf der Maur, M.; Povolotskyi, M.; Romano, G.; Di Carlo, A.; Computational Electronics, 2009. IWCE ’09. 13th International Workshop on; 2009 , Page(s): 1 – 4
“High efficient 635nm resonant-cavity light-emitting diodes with modified electron stopped layers”,
Lysak, V.V.; Park, C.Y.; Park, K.W.; Yong Tak Lee; Numerical Simulation of Optoelectronic Devices, 2009. NUSOD 2009. 9th International Conference on; 2009 , Page(s): 113 – 114
“Improving Light Output Power of the GaN-Based Vertical-Injection Light-Emitting Diodes by Mg Implanted Current Blocking Layer”,
Min-An Tsai; Peichen Yu; Chen, J.R.; Huang, J.K.; Chiu, C.H.; Kuo, H.C.; Lu, T.C.; Lin, S.H.; Wang, S.C.; Photonics Technology Letters, IEEE; Volume: 21 , Issue: 11, 2009 , Page(s): 688 – 690
“Optimization and Analysis on Several Impact Factors of High-Gain Separate Absorption, Grading, Charge and Multiplication Avalanche Photodiodes”,
Dapeng Hu; Bin Xu; Xilin Zhou; Fangmin Guo; Photonics and Optoelectronics, 2009. SOPO 2009. Symposium on; 2009 , Page(s): 1 – 4
“Avalanche photodiode punch-through gain determination through excess noise analysis”,
Liu, Han-Din; Pan, Huapu; Hu, Chong; McIntosh, Dion; Lu, Zhiwen; Campbell, Joe; Kang, Yimin; Morse, Mike; Journal of Applied Physics, Volume: 106 , Issue: 6, 2009 , Page(s): 064507 – 064507-4
“Effect of N-Type AlGaN Layer on Carrier Transportation and Efficiency Droop of Blue InGaN Light-Emitting Diodes”,
Sheng-Horng Yen; Miao-Chan Tsai; Meng-Lun Tsai; Yu-Jiun Shen; Ta-Cheng Hsu; Yen-Kuang Kuo; Photonics Technology Letters, IEEE; Volume: 21 , Issue: 14, 2009 , Page(s): 975 – 977
“The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes”,
Zhu, Di; Xu, Jiuru; Noemaun, Ahmed N.; Kim, Jong Kyu; Schubert, E. Fred; Crawford, Mary H.; Koleske, Daniel D.; Applied Physics Letters, Volume: 94 , Issue: 8, 2009 , Page(s): 081113 – 081113-3
2008
“2D-simulation of inverted metamorphic GaInP/GaAs/GaInAs triple junction solar cell”,
Li, Z.Q.; Xiao, Y.G.; Lestrade, M.; Li, Z.M. Simon; Photovoltaic Specialists Conference, 2008. PVSC ’08. 33rd IEEE, 2008 , Page(s): 1 – 6
“Numerical Study of the Optical Saturation and Voltage Control of a Transistor Vertical-Cavity Surface-Emitting Laser”,
Wei Shi; Chrostowski, L.; Faraji, B.; Photonics Technology Letters, IEEE Volume: 20 , Issue: 24, 2008 , Page(s): 2141 – 2143
“Strain relaxation induced microphotoluminescence characteristics of a single InGaN-based nanopillar fabricated by focused ion beam milling”,
Yu, Peichen; Chiu, C. H.; Wu, Yuh-Renn; Yen, H. H.; Chen, J. R.; Kao, C. C.; Yang, Han-Wei; Kuo, H. C.; Lu, T. C.; Yeh, W. Y.; Wang, S. C.; Applied Physics Letters; Volume: 93 , Issue: 8, 2008 , Page(s): 081110 – 081110-3
“Polarization-dependent optical characteristics of violet InGaN laser diodes”,
Yen, Sheng-Horng; Kuo, Yen-Kuang; Journal of Applied Physics Volume: 103 , Issue: 10, 2008 , Page(s): 103115 – 103115-6
“Voltage controlled operation of a transistor vertical cavity surface emitting laser”,
Wei Shi; Chrostowski, L.; Faraji, B.; Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International; 2008 , Page(s): 89 – 90
“Laterally-corrugated ridge-waveguide distributed feedback lasers at 980 nm”,
Laakso, A.; Viheriala, J.; Dumitrescu, M.; Tommila, J.; Haring, K.; Leinonen, T.; Ranta, S.; Pessa, M.; Numerical Simulation of Optoelectronic Devices, 2008. NUSOD ’08. International Conference on; 2008 , Page(s): 17 – 18
” Fabrication and Characterization of Temperature Insensitive 660-nm Resonant-Cavity LEDs”,
Jun-Rong Chen; Tsung-Shine Ko; Tien-Chang Lu; Yi-An Chang; Hao-Chung Kuo; Yen-Kuang Kuo; Jui-Yen Tsai; Li-Wen Laih; Shing-Chung Wang; Lightwave Technology, Journal of; Volume: 26 , Issue: 13, 2008 , Page(s): 1891 – 1900
“Probing and modulating surface electron accumulation in InN by the electrolyte gated Hall effect”,
Brown, G. F.; Ager, J. W.; Walukiewicz, W.; Schaff, W. J.; Wu, J.; Applied Physics Letters; Volume: 93 , Issue: 26, 2008 , Page(s): 262105 – 262105-3
“Control of optical mode distribution through etched microstructures for improved broad area laser performance”,
Crump, P.; Leisher, P.; Matson, T.; Anderson, V.; Schulte, D.; Bell, J.; Farmer, J.; DeVito, M.; Martinsen, R.; Kim, Y. K.; Choquette, K. D.; Erbert, G.; Trankle, G.; Applied Physics Letters, Volume: 92 , Issue: 13, 2008 , Page(s): 131113 – 131113-3
“High speed VCSELs with separated quantum wells”
Lysak, V.V.; Safonov, I.M.; Song, Y.M.; Sukhoivanov, I.A.; Yong Tak Lee; Numerical Simulation of Optoelectronic Devices, 2008. NUSOD ’08. International Conference on; 2008 , Page(s): 89 – 90
” Design optimization of GaInNAs quantum wells for long wavelength VCSEL”,
Alias, M.S.; Maulud, M.F.; Mitani, S.; Shaari, S.; Manaf, N.; Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on; 2008 , Page(s): 311 – 315
“Numerical Study on Optimization of Active Layer Structures for GaN/AlGaN Multiple-Quantum-Well Laser Diodes”,
Jun-Rong Chen; Tsung-Shine Ko; Po-Yuan Su; Tien-Chang Lu; Hao-Chung Kuo; Yen-Kuang Kuo; Shing-Chung Wang; Lightwave Technology, Journal of; Volume: 26 , Issue: 17, 2008 , Page(s): 3155 – 3165
“Based simulation of high gain and low breakdown voltage InGaAs/InP avalanche photodiode”,
Lei, W.; Guo, F.M.; Lu, W.; Xiong, D.Y.; Zhu, Z.Q.; Chu, J.H.; Numerical Simulation of Optoelectronic Devices, 2008. NUSOD ’08. International Conference on; 2008 , pp. 37 – 38
“Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells”,
Ni, Xianfeng; Fan, Qian; Shimada, Ryoko; Ozgur, Umit; Morkoc, Hadis; Applied Physics Letters, Volume: 93 , Issue: 17, 2008 , pp. 171113 – 171113-3
“The origin of efficiency droop in GaN-based light-emitting diodes and its solution”,
Jong Kyu Kim; Min-Ho Kim; Schubert, M.F.; Qi Dai; Tan Sakong; Sukho Yoon; Cheolsoo Sone; Yongjo Park; Piprek, J.; Schubert, E.F.; Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on; 2008 , pp. 1 – 2
“Study of grain boundaries influence on electrical properties of nitrides”,
A. Szyszka, B. Paszkiewicz, R. Paszkiewicz & M. Tlaczala, Vaccum, Vol. 82, No. 10, pp. 1034-1039 (June 3 2008)
“Effects of Built-In Polarization and Carrier Overflow on InGaN Quantum-Well Lasers With Electronic Blocking Layers”,
Jun-Rong Chen & al., Journal of Lightwave Technology, Vol. 26, No. 3, pp. 329-337 (Feb. 1 2008)
“Temperature behaviour of top mirror reflection spectrum in intra-cavity-contacted oxide-confined vertical-cavity surface-emitting lasers”,
A.A. Dyomin, V.V. Lysak, S.I. Petrov, Y.T. Lee & I.A. Sukhoivanov, Optics and Lasers in Engineering Volume 46, Issue 3, March 2008, pp. 211-216
“An effect of As flux on GaAs/AlAs quantum wells: A combined photoluminescence and reflection high-energy electron diffraction study”
J. Pakarinen, V. Polojarvi, & al. Applied Surface Science, Volume 255, Issue 5, Part 2, 30 December 2008, Pages 2985-2988
“Characterization and optimization of high-power InGaAs/InP photodiodes”
H. Pan; A. Beling; H. Chen ; J. C. Campbell, Optical and Quantum Electronics, Volume 40, Number 1 / January, 2008, pp. 41-46
“Advanced InGaAs/InAlAs/InP avalanche photodiodes for high-speed detection of 1.55 m infrared radiation”,
Kaniewski, J.; Muszalski, J.; Piotrowski, J., Infrared Spaceborne Remote Sensing and Instrumentation XVI. Edited by Strojnik, Marija. Proceedings of the SPIE, Volume 7082, pp. 70820F-70820F-6 (2008)
“Optical modeling of laterally-corrugated ridge-waveguide gratings”,
A. Laakso; M. Dumitrescu; & al., Optical and Quantum Electronics, Volume 40, Numbers 11-12 / September, 2008, pp. 907-920
“Improvement in piezoelectric effect of violet InGaN laser diodes”,
Sheng-Horng Yen and Yen-Kuang Kuo, Optics Communications, Volume 281, Issue 18, 15 September 2008, Pages 4735-4740
“A comparative study on single and double channel AlGaN/GaN high electron mobility transistor”,
Jing Yao Zheng; Jenq Shinn Wu; Der Yuh Lin; Hung Ji Lin, physica status solidi (c), Volume 5 Issue 6, Pages 1944 – 1946, Special Issue: 7th International Conference on Nitride Semiconductors (ICNS-7)
“Effect of active-layer structures on temperature characteristics of InGaN blue laser diodes”
Han-Youl Ryu and Kyoung-Ho Ha, Optics Express, Vol. 16, Issue 14, pp. 10849-10857 (2008)
“Design of multilayer antireflection coatings made from co-sputtered and low-refractive-index materials by genetic algorithm”
Martin F. Schubert, Frank W. Mont, & al., Optics Express, Vol. 16, Issue 8, pp. 5290-5298 (2008)
2007
“Junction temperature and reliability of high-power flip-chip light emitting diodes”,
Z.Z. Chen & al.; Materials Science in Semiconductor Processing, Vol. 10, Issues 4-5 (August-October 2007), pp. 206-210
“Simulation of Intra-Cavity Contacted Oxide-Confined Vertical Cavity Surface Emitting Lasers for 10 Gb/s Ultrashort Optical Interconnections”,
Lysak, V. & Yong-Tak Lee, 9th International Conference on Transparent Optical Networks (1-5 July 2007), Vol. 2, pp. 132-136
“Numerical study on strained InGaAsP/InGaP quantum wells for 850-nm vertical-cavity surface-emitting lasers”,
Y.-K. Kuo, J.-R. Chen, M.-L. Chen & B.-T. Liou, Applied Physics B: Lasers and Optics, Volume 86, Number 4.
“Improvement of quantum efficiency of MBE grown AlGaAs/InGaAs/GaAs edge emitting lasers by optimisation of construction and technology”,
Kamil Kosiel, Jan Muszalski, Anna Szerling, Maciej Bugajski & Rafal Jakiela, Vol. 82, Issue 4 (12 December 2007), pp. 383-388
“Highly efficient resonant-cavity light-emitting diodes for compact color projectors”,
Lysak, V.V. & Lee, Y.-T., International Workshop on Optoelectronic Physics and Technology 2007 (20-22 June 2007)
“Comparison of two kinds of active layers for high-power narrow-stripe distributed feedback laser diodes”,
Fu Sheng-Hui, Song Guo-Feng & Chen Liang-Hui, 2007 Chinese Phys. 16 pp.817-820
“Design and analysis of a GaAs-based 850-nm vertical-cavity surface-emitting laser with different doping in the reflection regions”,
S. M. Mitani, P. K. Choudhury & M. S. Alias, Journal of Russian Laser Research, Vol. 28, No. 6
“Experimental and numerical study on AlGaInAs/AlGaAs distributed feedback lasers with GaInP gratings”,
Fu Shenghui, Song Guofeng & Chen Lianghui, Applied Physics A: Materials Science & Processing, Vol. 89, No. 4
“Fabrication and properties of coherent-structure In-polarity InN/In_0.7Ga_0.3N multiquantum wells emitting at around 1.55 μm”,
Song-Bek Che, Tomoyasu Mizuno, Xinqiang Wang, Yoshihiro Ishitani & Akihiko Yoshikawa, Journal of Applied Physics 102, 083539 (October 2007)
“Comparison of gain in group-III-nitride laser structures grown by metalorganic vapour phase epitaxy and plasma-assisted molecular beam epitaxy on bulk GaN substrates”,
T Swietlik & al., 2007 Semicond. Sci. Technol. 22 pp.736-741
“Etched Micro-structures for Control of Optical Mode Distribution for Improved Broad Area Laser Performance”,
Crump, P. & al., Optical Society of America – CLEO/QELS Conference, 6-11 May 2007
“Investigation of violet InGaN laser diodes with normal and reversed polarizations”,
Sheng-Horng Yen, Yen-Kuang Kuo, Meng-Lun Tsai & Ta-Cheng Hsu, Appl. Phys. Lett. / Volume 91 / Issue 20 / LASERS, OPTICS, AND OPTOELECTRONICS, 16 Nov. 2007
“Gain and threshold properties of InGaAsN/GaAsN material system for 1.3μm semiconductor lasers”,
Sheng-Horng Yen, Mei-Ling Chen & Yen-Kuang Kuo, Optics & Laser Technology 39 (2007), pp. 1432¨C1436
“Numerical study on gain and optical properties of AlGaInAs, InGaNAs, and InGaAsP material systems for 1.3μm semiconductor lasers”,
Yen-Kuang Kuo, Sheng-Horng Yen, Ming-Wei Yao, Mei-Ling Chen & Bo-Ting Liou, Optics Communications Volume 275, Issue 1, 1 July 2007, pp. 156-164
“Simulation of quantum wells with ‘spikes’ and ‘dips’ “,
Laakso, A; Dumitrescu, M.; Toikkanen, L.; Tukiainen, A.; Rimpilainen, V.; Pessa, M., NUSOD ’07 (24-28 Sept. 2007)
“Optical characterization of AlxGa1-xN/GaN high electron mobility transistor structures”,
D.Y. Lin, J.D. Wu, J.Y. Zheng & C.F. Lin, Physica E: Low-dimensional Systems and Nanostructures, Volume 40, Issue 5, pp. 1763-5, 17th International Conference on Electronic Properties of Two-Dimensional Systems
“Photoreflectance and photoluminescence investigations of two-dimensional electron gas in pseudomorphic high electron mobility transistor structures”,
D.Y. Lin, M.C. Wu, H.J. Lin & W.L. Chen, Physica E: Low-dimensional Systems and Nanostructures Volume 40, Issue 5, pp. 1380-1382, 17th International Conference on Electronic Properties of Two-Dimensional Systems
“Origin of efficiency droop in GaN-based light-emitting diodes”,
Min-Ho Kim, Martin F. Schubert, Qi Dai, Jong Kyu Kim, & E. Fred Schubert, Appl. Phys. Lett. 91, 183507 (2007)
“Simulation of deep ultraviolet light-emitting diodes”,
Yen-Kuang Kuo & Sheng-Horng Yen, Proceedings of SPIE — Volume 6669, Seventh International Conference on Solid State Lighting (Sep. 14, 2007)
“Numerical simulation of top-emitting organic light-emitting diodes with electron and hole blocking layers”,
Shu-Hsuan Chang & Cheng-Hong Yang, Proceedings of SPIE — Volume 6655, Organic Light Emitting Materials and Devices XI (Oct. 16, 2007)
“Numerical simulation of bright white multilayer organic light-emitting diodes”,
Mei-Ling Chen, Cheng-Hong Yang, Chien-Yang Wen, Shu-Hsuan Chang & Yen-Kuang Kuo, Proceedings of SPIE — Volume 6655, Organic Light Emitting Materials and Devices XI (Oct. 16, 2007)
“Effect of spontaneous and piezoelectric polarization on the optical characteristics of blue light-emitting diodes”,
Yen-Kuang Kuo, Sheng-Horng Yen & Miao-Chan Tsai, Proceedings of SPIE — Volume 6669,Seventh International Conference on Solid State Lighting, 66691I (Sep. 14, 2007)
“Modeling of GaN based resonant-cavity light-emitting diode”,
Z. Simon Li & Z. Q. Li, Proceedings of SPIE — Volume 6486, Light-Emitting Diodes: Research, Manufacturing, and Applications XI, 64860S (Feb. 13, 2007)
“Optical properties of In_0.3Ga_0.7N/GaN green emission nanorods fabricated by plasma etching”,
C H Chiu & al.,2007 Nanotechnology 18 335706
“Design and properties of InGaAs/InGaAsP/InP avalanche photodiode”,
Daniel Ha?ko – Jaroslav Kov¨￠c – Franti?ek Uherek – Jaroslava ?kriniarov – J¨￠n Jakabovic – Lor¨￠nt Peternai, Journal of Electrical Engineering, Vol. 58, No. 3, 2007, pp. 173¨C176
“Theoretical and Experimental Analysis of Temperature-Insensitive 655-nm Resonant-Cavity LEDs”,
Chen, Jun-Rong; Chang, Yi-An; Kuol, Hao-Chung; Lu, Tien-Chang; Kuo, Yen-Kuang; Wang, Shing-Chung; CLEO/Pacific Rim 2007, 26-31 Aug. 2007
“Comprehensive modelling of resonant-cavity light-emitting diode”,
Li Z. Q.; Li Z. M. Simon, Physica status solidi. C. Current topics in solid state physics, Vol. 4, No. 5, pp. 1633-1636
“Two-dimensional simulation of GaInP/GaAs/Ge triple junction solar cell”,
Li Z. Q.; Xiao Y. G.; Li Z. M. Simon, Physica status solidi. C. Current topics in solid state physics, Vol. 4, No. 5, pp. 1637-1640
“Dynamic drift-diffusion simulation of InP/InGaAs SAGCM APD”,
Xiao Y. G.; Li Z. Q.; Li Z. M. Simon, Physica status solidi. C. Current topics in solid state physics, Vol. 4, No. 5, pp. 1641-1645
“Modeling of resonant cavity enhanced separate absorption charge and multiplication avalanche photodiodes by Crosslight APSYS”,
Y. G. Xiao, Z. Q. Li, and Z. M. Simon Li, Proceedings of SPIE — Volume 6660, Infrared Systems and Photoelectronic Technology II, (Sep. 12, 2007)
“Modeling of Si-based solar cells with V-grooved surface texture by Crosslight APSYS”,
Y. G. Xiao, M. Lestrade, Z. Q. Li, and Z. M. S. Li , Proceedings of SPIE — Volume 6651, Photovoltaic Cell and Module Technologies, (Sep. 11, 2007)
2006
"Study of quantum and short-channel effects for sub-50nm FINFETS," Wei-Da HU, Xiao-Shuang CHEN, Zhi-Jue QUAN, Xu-Chang ZHOU and Wei LU, Journal of Infrared and Millimeter Waves, vol. 25, No. 2, p. 90-94, 2006
"High-power distributed feedback laser diodes emitting at 820 nm," Shenghui FU, Yuan Zhong, Guofeng Song, Lianghui Chen, Chinese Journal of Semiconductors, vol. 27, No. 6, p. 966-969, 2006.
"Effects of Built-In Polarization on InGaN-GaN Vertical-Cavity Surface-Emitting Lasers," Joachim Piprek, Robert Farrell, Steve DenBaars, and Shuji Nakamura, IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 18, NO. 1, JANUARY 1, 2006, p.7
"A Comparative Study of Higher Order Bragg Gratings: Coupled-Mode Theory Versus Mode Expansion Modeling," H. Wenzel, R. G・her, A. M. Shams-Zadeh-Amiri, Member, IEEE, and P. Bienstman, IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 42, NO. 1, JANUARY 2006, p. 64
Man-Fang Huang, Member, IEEE, and Tsung-Hung Lu, "Optimization of the Active-Layer Structure for the Deep-UV AlGaN Light-Emitting Diodes," IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 42, NO. 8, AUGUST 2006, p. 820
H. Y. Ryu, K. H. Ha, S. N. Lee, T. Jang, H. K. Kim, J. H. Chae, K. S. Kim, K. K. Choi, J. K. Son, H. S. Paek, Y. J. Sung, T. Sakong, O. H. Nam, and Y. J. Park, "Highly stable temperature characteristics of InGaN blue laser diodes, " APPLIED PHYSICS LETTERS 89, 031122 (2006)
O. Douheret, K. Maknys and S. Anand, "Electrical Characterisation of III-V Buried Heterostructure Lasers by Scanning Capacitance Microscopy," book chapter, Book Series NATO Science Series, Volume Volume 186, Springer Netherlands, 2006, Pages 413-424
Christoph Wachter, "INTEGRATED OPTICS DESIGN: SOFTWARE TOOLS AND DIVERSIFIED APPLICATIONS," book chapter, NATO Science Series II: Mathematics, Physics and Chemistry Frontiers in Planar Lightwave Circuit Technology, Design, Simulation, and Fabrication, Siegfried Janz, Jiri Ctyroky and Stoyan Tanev, ed., Springer Netherlands 2006
Yi-An Chang, Sheng-Horng Yen, Te-Chung Wang, Hao-Chung Kuo, Yen-Kuang Kuo, Tien-Chang Lu and Shing-Chung Wang, "Experimental and theoretical analysis on ultraviolet 370 nm AlGaInN light-emitting diodes," Semicond. Sci. Technol. 21 No 5 (May 2006) 598-603
Yow-Jon Lin and Yow-Lin Chu, "Effects of the thickness of capping layers on electrical properties of Ni ohmic contacts on p-AlGaN and p-GaN using an ohmic recessed technique," Semicond. Sci. Technol. 21 No 8 (August 2006) 1172-1175
D. Y. Lin, W. C. Lin, and J. J. Shiu, "Optical study of the AlGaN/GaN high electron mobility transistor structures," phys. stat. sol. (a) 203, No. 7, 1856-1860 (2006)
Yen-Kuang KUO, Shang-Wei HSIEH and Hsiu-Fen CHEN, "Numerical Study on Optimization of Active Regions for um AlGaInAs and InGaAsN Material Systems," Japanese Journal of Applied Physics, Vol. 45, No. 3A, 2006, pp. 1588-1590
Bao-Jen Pong, Chi-Hsing Chen, Sheng-Horng Yen, Jin-Fu Hsu, Chun-Ju Tun, Yen-Kuang Kuo, Cheng-Huang Kuo, Gou-Chung Chi,
"Abnormal blue shift of InGaN micro-size light emitting diodes," Solid-State Electronics 50 (2006) 1588-1594
Takashi Kyonoa, Hideki Hirayama, Katsushi Akita, Takao Nakamura, Masahiro Adachi, and Koshi Ando, "Influence of residual oxygen impurity in quaternary InAlGaN multiple-quantum-well active layers on emission efficiency of ultraviolet light-emitting diodes on GaN substrates," JOURNAL OF APPLIED PHYSICS 99, 114509 (2006)
I. Ahmad, V. Kasisomayajula, D. Y. Song, L. Tian, J. M. Berg, and M. Holtz, "Self-heating in a GaN based heterostructure field effect transistor: Ultraviolet and visible Raman measurements and simulations," JOURNAL OF APPLIED PHYSICS 100, 113718 (2006)
Joachim Piprek, "GaN-based Devices: Physics and Simulation," Proc. 6th Inter. Conf. on Numerical Simulation of Optoelectronic Devices, NUSOD'06, Singapore, 11-14 Sept. 2006, paper MA2
S.-H. Yen, B.J. Chen, Y.-K. Kuo, "Simulation of InGaN Violet and Ultraviolet Multiple-Quantum-Well Laser Diodes,"
Proc. 6th Inter. Conf. on Numerical Simulation of Optoelectronic Devices, NUSOD'06, Singapore, 11-14 Sept. 2006, paper MC1
C. S. Xia, W. Lu; Z. M. Simon Li, Z. Q. Li, "Simulation of InGaN/GaN multiple quantum well light emitting diodes with Quantum Dot electrical and optical effects," Proc. 6th Inter. Conf. on Numerical Simulation of Optoelectronic Devices, NUSOD'06, Singapore, 11-14 Sept. 2006, paper MC3
Y. Sheng, O. Shmatov, Z. M. Simon Li, "3D Simulation of InGaN/GaN Micro-Ring Light-Emitting Diodes," Proc. 6th Inter. Conf. on Numerical Simulation of Optoelectronic Devices, NUSOD'06, Singapore, 11-14 Sept. 2006, paper MC5
M. Nadir, "First and second order DFB lasers with GaInNAs-GaAs quantum-well," Proc. 6th Inter. Conf. on Numerical Simulation of Optoelectronic Devices, NUSOD'06, Singapore, 11-14 Sept. 2006, paper TuP9
I.-S. Chung, Y. T. Lee, "Modeling of distributed Bragg reflectors for current crowding simulation in intracavity-contacted VCSEL," Proc. 6th Inter. Conf. on Numerical Simulation of Optoelectronic Devices, NUSOD'06, Singapore, 11-14 Sept. 2006, paper WB3
Sheng-Horng Yen, Bo-Jean Chen, Mei-Ling Chen, Yen-Kuang Kuo, Yi-An Chang, and Hao-Chung Kuo, "Fabrication and simulation of ultraviolet AlGaInN light-emitting diodes," Light-Emitting Diodes: Research, Manufacturing, and Applications X, edited by Klaus P. Streubel, H. Walter Yao, E. Fred Schubert, Proc. of SPIE Vol. 6134, 61340N-1, (2006)
Shu-Hsuan Chang, Yung-Cheng Chang, Cheng-Hong Yang, Jun-Rong Chen, Yen-Kuang Kuo, "Numerical simulation of optical and electronic properties for multilayer organic light-emitting diodes and its application in engineering education,"
Light-Emitting Diodes: Research, Manufacturing, and Applications X, edited by Klaus P. Streubel, H. Walter Yao, E. Fred Schubert, Proc. of SPIE Vol. 6134, 61340R-1, (2006)
Y. G. Xiao, Z. Q. Li, Z. M. Simon Li, "Modeling of avalanche photodiodes by Crosslight APSYS," Infrared and Photoelectronic Imagers and Detector Devices II, edited by Randolph E. Longshore, Ashok Sood, Proc. of SPIE Vol. 6294, 62940Z-1, (2006)
Z.Q. Li, Alfred K. M. Lam, and Z. Simon Li, "Analysis of a Surface-normal Coupled-Quantum-Well Modulator at 1.55 um,"
Physics and Simulation of Optoelectronic Devices XIV, edited by Marek Osinski, Fritz Henneberger, Yasuhiko Arakawa, Proc. of SPIE Vol. 6115, 611508-1, (2006)
Yen-Kuang Kuo, Sheng-Horng Yen, Ming-Wei Yao, "Optimization study on active layers and optical performance for 1.3-
um AlGaInAs and InGaNAs semiconductor lasers," Physics and Simulation of Optoelectronic Devices XIV, edited by Marek Osinski, Fritz Henneberger, Yasuhiko Arakawa, Proc. of SPIE Vol. 6115, 611526-1, (2006)
Yen-Kuang Kuo, Sheng-Horng Yen, Jun-Rong Chen "Numerical simulation of AlInGaN ultraviolet light-emitting diodes,"
Optoelectronic Devices: Physics, Fabrication, and Application III, edited by Joachim Piprek, Jian Jim Wang, Proceedings of SPIE Vol. 6368, 636812, (2006)
H. Wenzel, R. G・her, A. M. Shams-Zadeh-Amiri, and P. Bienstman, "A Comparative Study of Higher Order Bragg Gratings: Coupled-Mode Theory Versus Mode Expansion Modeling," IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 42, NO. 1, JANUARY 2006,p. 64
Yi-An Chang, Sheng-Horng Yen, Te-ChungWang, Hao-Chung Kuo, Yen-Kuang Kuo, Tien-Chang Lu and Shing-Chung Wang
"Experimental and theoretical analysis on ultraviolet 370 nm AlGaInN light-emitting diodes," Semicond. Sci. Technol. 21 (2006) 598-603
Yow-Jon Lin1 and Yow-Lin Chu, "Effects of the thickness of capping layers on electrical properties of Ni ohmic contacts on p-AlGaN and p-GaN using an ohmic recessed technique," Semicond. Sci. Technol. 21 (2006) 1172-1175
Yi-An Chang, Tsung-Shine Ko, Jun-Rong Chen2, Fang-I Lai,Chun-Lung Yu, I-Tsung Wu, Hao-Chung Kuo,Yen-Kuang Kuo, Li-Wen Laih, Li-Horng Laih, Tin-Chang Lu and Shing-Chung Wang "The carrier blocking effect on 850 nm InAlGaAs/AlGaAs vertical-cavity surface-emitting lasers," Semicond. Sci. Technol. 21 (2006) 1488-1494
2005
Simon Li, Z.Q. Li, O. Shmatov, C. S. Xia and W. Lu, "3-D simulations on realistic GaN-based light-emitting diodes", Proceedings of MRS 05 Fall, "GaN, AlN, InN, and related materials"
Yi-An Chang, Jun-Rong Chen, Hao-Chung Kuo, Yen-Kuang Kuo, and Shing-Chung Wang, Accepted 8 September 2005, "Theoretical and experimental analysis on InAlGaAs/AlGaAs active region of 850-nm vertical-cavity surface-emitting lasers", to be published in IEEE Journal of Lightwave Technology. (SCI, EI)
Yi-An Chang, Sheng-Horng Yen, De-Chung Wang, Hao-Chung Kuo, Yen-Kuang Kuo, and Shing-Chung Wang, 2005, "Experimental and theoretical analysis on ultraviolet 370-nm AlGaInN light-emitting diode", submitted to IEEE Journal of Quantum Electronics. (revised) (SCI, EI)
Shang-Wei Hsieh and Yen-Kuang Kuo, Accepted 9 August 2005, "A numerical study on characteristic temperature of short-cavity 1.3-um AlGaInAs/InP MQW lasers", to be published in Applied Physics A: Materials Science & Processing. (SCI, EI)
Yen-Kuang Kuo, Shang-Wei Hsieh, and Hsiu-Fen Chen, 2005, "Numerical study on optimization of active regions for 1.3-um AlGaInAs and InGaAsN material systems", to be published in Japanese Journal of Applied Physics. (accepted with optional revisions) (SCI, EI)
Yi-An Chang, Chuan-Yu Luo, Hao-Chung Kuo, Yen-Kuang Kuo, Chia-Feng Lin, and Shing-Chung Wang, 15 November 2005, "Simulation of InGaN quantum well laser performance using quaternary InAlGaN alloy as electronic blocking layer", to be published in Japanese Journal of Applied Physics, Vol. 44, No. 11 on 15 November 2005. (SCI, EI)
Man-Fang Huang, Meng-Lun Tsai, Jen-Yuan Shin, Yu-Lung Sun, Ray-Min Yang, and Yen-Kuang Kuo, Published online 24 May 2005, "Optimization of active layer structures to minimize leakage current for AlGaInP laser diode", Applied Physics A: Materials Science & Processing (Publisher: Springer-Verlag GmbH; ISSN: 0947-8396 (Paper) 1432-0630 (Online); DOI: 10.1007/s00339-005-3258-5; Issue: Online First). (SCI, EI)
Yi-An Chang, Hao-Chung Kuo, Chun-Yi Lu, Yen-Kuang Kuo, and Shing-Chung Wang, 27 April 2005, "Improving high temperature performance in continuous-wave mode InGaAsN/GaAsN ridge waveguide lasers", Semiconductor Science and Technology, Vol. 20, pp. 601-605. (SCI, EI)
Man-Fang Huang, Meng-Lun Tsai, and Yen-Kuang Kuo, January 2005, "Improvement of characteristic temperature for AlGaInP laser diodes", Proceedings of SPIE, Vol. 5628 (Semiconductor Lasers and Applications II), pp. 127-134. (EI) (invited paper)
Sheng-Horng Yen, Bo-Ting Liou, Mei-Ling Chen, and Yen-Kuang Kuo, January 2005, "Thermal and piezoelectric effects on optical properties of violet-blue InGaN lasers", Proceedings of SPIE, Vol. 5628 (Semiconductor Lasers and Applications II), pp. 156-163. (EI)
Shang-Wei Hsieh, Hsiu-Fen Chen, and Yen-Kuang Kuo, January 2005, "Simulation of 1.3-mm AlGaInAs/InP strained MQW lasers", Proceedings of SPIE, Vol. 5628 (Semiconductor Lasers and Applications II), pp. 318-326. (EI)
Yen-Kuang Kuo, Shang-Wei Hsieh, Hsiu-Fen Chen, Mei-Ling Chen, and Bo-Ting Liou, 2005, "Numerical study on 1.3-um semiconductor lasers with variant active region materials", to be submitted to Optics Communications. (SCI, EI)
"Device Physics of an Optoelectronic Integrated Wavelength Converter," (invited), J. Piprek, V. Lal, J. Hutchinson, A. Tauke Pedretti, M. Dummer, and L. Coldren, SPIE Photonics West conference on Optoelectronic Integrated Circuits IX, San Jose, CA, 2005.
"Temperature Dependence of the Relaxation Resonance Frequency of Long-Wavelength Vertical-Cavity Lasers," Bjorlin, E.S.; Geske, J.; Mehta, M.; Piprek, J.; Bowers, J.E.; IEEE Photonics Technology Letters, Volume 17, Issue 5, May 2005, Page(s):944 - 946.
"Analysis of InGaN/GaN VCSELs," J.Piprek, R. Farrell, S. DenBaars, S. Nakamura, in: Proc. IEEE/LEOS Int. Conf. Numerical Simulation of Optoelectronic Devices (NUSOD), Berlin, Germany, 2005.
"Device Physics of an Optoelectronic Integrated Wavelength Converter," J. Piprek, V. Lal, J. Hutchinson, A. Tauke Pedretti, M. Dummer, and L. Coldren, in: Optoelectronic Integrated Circuits IX, SPIE Proc. 5729, 2005.
"GaN-based Light Emitting Diodes," J. Piprek and S. Li, Chapter 10 in: Optoelectronic Devices: Advanced Simulation and Analysis, ed. by J. Piprek, Springer Verlag, New York, 2005.
"Monolithic Wavelength Converter: Many-Body Effects and Saturation Analysis," J. Piprek, S. Li, P. Mensz, and J. Hader, Chapter 14 in: Optoelectronic Devices - Advanced Simulation and Analysis, ed. by J. Piprek, Springer Verlag, New York, 2005.
"Broadband Rate-Equation Model including Many-Body Gain for WDM Traveling-Wave SOAs," V. Lal, W. Donat, A. Tauke Pedretti, L. Coldren, D. Blumenthal, and J. Piprek; in: Proc. IEEE/LEOS Int. Conf. Numerical Simulation of Optoelectronic Devices (NUSOD), Berlin, Germany, 2005.
"Piezoelectric and thermal effects on optical properties of violet-blue InGaN lasers," Sheng-Horng Yen, Bo-Ting Liou, Mei-Ling Chen, Yen-Kuang Kuo, Semiconductor Lasers and Applications II, edited by Jian-quan Yao,Yung Jui Chen, Seok Lee, Proceedings of SPIE Vol. 5628 (SPIE,Bellingham, WA, 2005), p. 156.
"Ultrafast Gain Dynamics in Asymmetrical Multiple Quantum-Well Semiconductor Optical Amplifiers," Vladimir V. Lysak, Hitoshi Kawaguchi, Igor A. Sukhoivanov, Takeo Katayama, and Aleksey V. Shulika, IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 41, NO. 6, JUNE 2005, p.797.
"Design and Fabrication of Low Beam Divergence and High Kink-Free Power Lasers," Bocang Qiu, Stewart D. McDougall, Xuefeng Liu, Gianluca Bacchin, and John H. Marsh IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 41, NO. 9, SEPTEMBER 2005, p. 1124.
"Comparison between a graded and step-index optical cavity in InGaN MQW laser diodes," Juan A Martyn1 and M Sanchez, Semicond. Sci. Technol. 20 (2005) pp. 290-295.
"Simulation of 1.3-ｦm AlGaInAs/InP strained MQW lasers," Shang-Wei Hsieha, Hsiu-Fen Chena, Ming-Wei Yaob, Yen-Kuang Kuo, Semiconductor Lasers and Applications II, edited by Jian-quan Yao, Yung Jui Chen, Seok Lee, Proceedings of SPIE Vol. 5628 (SPIE, Bellingham, WA, 2005), p. 318.
"EFFICIENCY DEGRADATION DUE TO CARRIER BUILD-UP IN THE BROADENED WAVEGUIDES OF HIGH-POWER LASER DIODES: ANALYTICAL THEORY AND NUMERICAL VALIDATION," Eugene A. Avrutin and Boris S. Ryvkin, Proc. IEEE/LEOS Int. Conf. Numerical Simulation of Optoelectronic Devices (NUSOD), Berlin, Germany, 2005
"Numerical Simulation of Composition Grading in Active Layer of Quantum Well Lasers," Z. S. Li and P.M. Mensz, Proc. IEEE/LEOS Int. Conf. Numerical Simulation of Optoelectronic Devices (NUSOD), Berlin, Germany, 2005
"Generation-recombination effects on dark currents in CdTe-passivated midwave infrared HgCdTe photodiodes," A. Jozwikowska, K. Jozwikowski, J. Antoszewski, C. A. Musca, T. Nguyen, R. H. Sewell, J. M. Dell, and L. Faraone JOURNAL OF APPLIED PHYSICS 98, 014504 (2005)
"Current crowding in graded contact layers of intracavity-contacted oxide-confined vertical-cavity surface-emitting lasers,"
V. V. Lysak, K. S. Chang, and Y. T. Lee, APPLIED PHYSICS LETTERS 87, 231118 (2005)
"Self-heating study of an AlGaN/GaN-based heterostructure field-effect transistor using ultraviolet micro-Raman scattering,"
I. Ahmad, V. Kasisomayajula, and M. Holtza, J. M. Berg, S. R. Kurtz, C. P. Tigges, A. A. Allerman, and A. G. Baca, APPLIED PHYSICS LETTERS 86, 173503 (2005)
"Numerical simulation of long wavelength photovoltaic HgCdTe photodiodes," Xiang Yan Xu Wei Lu Xiao Shuang Chen Xue Chu Shen, The Joint 30th International Conference on Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, 2005. IRMMW-THz, 19-23 Sept. 2005, Volume: 1, On page(s): 156- 157 vol. 1
"Influence of nonuniform temperature distribution on reflection spectrum of top mirror in intracavity-contacted oxide-confined VCSELs," Dyomin, A.A. Lysak, V.V. Zinkovska, I.O., 7th International Conference on Laser and Fiber-Optical Networks Modeling, 2005. Proceedings of LFNM 2005. 15-17 Sept. 2005, On page(s): 143- 146
"Geometrical, optimization of intracavity contacted oxide confined vertical cavity surface emitting lasers,"
Lysak, V.V. Ki Soo Chang Yong Tak Lee, This paper appears in: Laser and Fiber-Optical Networks Modeling, 2005. Proceedings of LFNM 2005. 7th International Conference on Publication Date: 15-17 Sept. 2005 On page(s): 140- 142
2004
Yen-Kuang Kuo and Yi-An Chang, May 2004, "Effects of electronic current overflow and inhomogeneous carrier distribution on InGaN quantum-well laser performance", IEEE Journal of Quantum Electronics, Vol. 40, No. 5, pp. 437-444. (SCI, EI)
Yen-Kuang Kuo, Bo-Ting Liou, Mei-Ling Chen, Sheng-Horng Yen, and Cheng-Yang Lin, 15 February 2004, "Effect of band-offset ratio on analysis of violet-blue InGaN laser characteristics", Optics Communications, Vol. 231, Issues 1-6, pp. 395-402. (SCI, EI)
"Improvement of Kink-Free Output Power by Using Highly Resistive Regions in Both Sides of the Ridge Stripe for 980-nm Laser Diodes," Masahiro Yuda, Takuo Hirono, Member, IEEE, Atsuo Kozen, and Chikara Amano, IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 40, NO. 9, SEPTEMBER 2004, p. 1203.
"Degradation mechanism limiting the lifetime of ZnSe-based white light-emitting diodes," Koji Katayama and Takao Nakamura,JOURNAL OF APPLIED PHYSICS VOLUME 95, NUMBER 7 1 APRIL 2004, p. 3576.
"Design and Optimization of High-Performance 1.3 ｦm VCSELs," Joachim Piprek, Manish Mehta, and Vijay Jayaraman, in: Physics and Simulation of Optoelectronic Devices XII, SPIE Proc. 5349, 2004.
"Internal Efficiency Analysis of 280 nm Light Emitting Diodes," J. Piprek, C. Moe, S. Keller, S. Nakamura, and S. P. DenBaars, SPIE Optics East, Conf. on Physics and Applications of Optoelectronic Devices, Philadelphia, October 2004.
"Saturation Analysis of a Monolithic Wavelength Converter," J. Piprek, John Hutchinson, Jeffrey Henness, Milan Masanovic, and Larry A. Coldren, SPIE Optics East, Conf. on Physics and Applications of Optoelectronic Devices, Philadelphia, October 2004.
"Simulation of GaN-based Light Emitting Devices" (invited), J. Piprek, IEEE/EDS Int. Conf. on Simulation of Semiconductor Processes and Devices, Munich, Germany, September 2004.
"Many-Body Effects on InP-based Optoelectronic Wavelength Converters for WDM Applications" (postdeadline), J. Piprek, John Hutchinson, Jeff Henness, Larry Coldren, and J?rg Hader; 4th IEEE/LEOS Int. Conf. on Numerical Simulation of Optoelectronic Devices, Santa Barbara, August 2004.
"Carrier Loss Analysis for Ultraviolet Light Emitting Diodes", J. Piprek, Thomas Katona, Stacia Keller, Steve DenBaars, and Shuji Nakamura; 4th IEEE/LEOS Int. Conf. on Numerical Simulation of Optoelectronic Devices, Santa Barbara, August 2004.
Zhi-qiang Li, Vivian Zhou, Simon Li, T. Sudersena Rao, W.Y. Jiang, S.P. Watkins, "Chemical kinetics and design of gas inlets for III-V growth by MOVPE in a quartz showerhead reactor ," J. Crystal Growth, vol. 272, 2004,pp. 47-51.
"Effects of electronic current overflow and inhomogeneous carrier distribution on InGaN quantum-well laser performance " Yen-Kuang Kuo and Yi-An Chang, IEEE J. Quant. Electron., Vol. 40, No. 5, May 2004, pp. 437-444.
"Design optimization of InGaAsP-InGaAlAs 1.55 ｦm strain-compensated MQW lasers for direct modulation applications." M Nadeem Akram, Christofer Silfvenius, Olle Kjebon and Richard Schatz, Semicond. Sci. Technol. 19 No 5(May 2004) 615-625.
"GaN-based Light Emitting Diode " J. Piprek and S. Li, Chapter 10 in: Optoelectronic Devices - Advanced Simulation and Analysis, ed. by J. Piprek, Springer Verlag, New York, 2004.
"Monolithic Wavelength Converter: Many-Body Effects and Saturation Analysis" J. Piprek, S. Li, P. Mensz, and J. Hader, Chapter 14 in: Optoelectronic Devices - Advanced Simulation and Analysis, ed. by J. Piprek, Springer Verlag, New York, 2004.
"Quantum-mechanical modeling and characterization of direction tunneling in thin-oxide MOSFET," Yiming Li, Simon Z. Li, Jam-Wen Lee and Peter Mensz, Proc. of Symposium on Nano Device Technology 2004, Hsinchu, Taiwan, 12-13 May 2004, pp. 485-488.
"Effects of bnad-offset ratio on analysis of violet-blue InGaN laser characteristics," Yen-Kuang Kuo, Bo-Ting Liou, Mei-Ling Chen, Sheng-Horng Yen and Cheng-Yang Lin, Optics Communications, vol. 231, pp. 395-402, 2004.
J. Piprek, T. Katona, S.P. DenBaars, and S. Li, "3D Simulation and analysis of AlGaN/GaN ultraviolet light emitting diodes," Light-Emitting Diodes: Research, Manufacturing and Applications VIII, SPIE Proc. 5366-59 (2004).
J. Piprek, N. Trenado, J. M. Hutchinson, J. A. Henness, and L. A. Coldren, "Three-dimensional simulation of an integrated wavelength converter," in Physics and Simulation of Optoelectronic Devices XII, Photonics West 2004, SPIE Proc.5349-26 (2004)
"Realistic Simulation of Quantum Well Lasers" (invited), J. Piprek, NanoTech, Boston, MA, March 2004
"Design optimization of InGaAlAs/GaAs single and double quantum well lasers emitting at 808 nm," Mariusz Zbroszczyk and Maciej Bugajski, Proc. SPIE Int. Soc. Opt. Eng. 5349, 446 (2004).
"Lateral current injection (LCI) multiple quantum-well 1.55 um laser with improved gain uniformity across the active region," M . NADEEM AKRAM,
Optical and Quantum Electronics 36: 827-846, 2004., p. 827
"Investigation of Structures Using GaN(x)P(1-x) Active Layer," Lorant Petemai, 2004 International Students and Young Scientists Workshop on Photonics and Microsystems, p. 41
"InGaAs/InP Avalanche Photodiode with Separated Absorption, Charge and Multiplication Layers," Daniel Hasko,2004 International Siudents and Young Scientists Workshop on Photonics and Microsystem
2003
"POTENTIALLY MODULATED MULTI-QUANTUM WELL SOLAR CELLS WITH IMPROVED DARK CURRENT CHARACTERISTICS," Naoyuki Shiotsuka, Tom Takeda, and Yoshitaka Okada Proc. of 3rd World Conference on Photovoltaic Energy Conversion May 11-18.2003 Osaka, Japan, paper SILN-D-03.
"The effects of quantum-well number on gain crosstalk in semiconductor optical amplifiers," Kasunic, K.J.; Tastavridis, K.; Clark, C.N.; Lestrade, M.; Champagne, A.; Maciejko, R.; Quantum Electronics, IEEE Journal of, Volume:39, Issue:7, July 2003, Pages:897 - 902.
"Use of a device simulator in conjunction with orthogonal arrays in optimizing the design of InAlGaAs/lnP MQW laser diodes," Darja,J.; Narata, S.; Nong Chen; Nakano, Y.; Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings of the IEEE/LEOS 3rd International Conference on ,14-16 Oct. 2003, Pages:25 - 26.
"Simulating vertical-cavity surface-emitting lasers based on GaInNAs-GaAs multi-quantum-wells," Nadir, M.; Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings of the IEEE/LEOS 3rd, International Conference on , 14-16 Oct. 2003, Pages:53 - 54.
"Physical modeling of a novel barrier-enhanced quantum-well photodetector device for optical receivers," Gregory B. Tait, Bahram Nabet, Microwave and Optical Technology Letters,Volume 40, Issue 3 , Pages 224 - 227.
"Current Transport Modeling in Quantum-Barrier-Enhanced Heterodimensional Contacts. " Taft, Gregory B.; Nabet, Bahram. IEEE Transactions on Electron Devices, Dec2003, Vol. 50 Issue 12, p2573, 6p.
Shmatov, O.; Li, Z.S.,"Truncated-inverted-pyramid light emitting diode geometry optimisation using ray tracing technique," Optoelectronics, IEE Proceedings-, Volume:150, Issue:3 ,17 June 2003, Pages:273 - 277.
"Predictive Simulation of Quantum Well Lasers: How close are we ?" (invited), J. Piprek, OSA Laser Science Conference, Tucson, AZ, October 2003.
"Advanced Analysis of Vertical Cavity Lasers" (invited), J. Piprek, Int. Conf. Mixed Design MIXDES, Lodz, Poland, June 2003
"Balanced Optimization of 1.31 um Tunnel-Junction VCSELs," Joachim Piprek, Vijay Jayaraman, Manish Mehta, and John E. Bowers, IEEE/LEOS Int. Conf. Numerical Simulation of Optoelectronic Devices (NUSOD), Tokyo, 2003.
"Physics of Waveguide Photodetectors with Integrated Amplification," J. Piprek, D. Lasaosa, D. Pasquariello, and J. E. Bowers, in: Physics and Simulation of Optoelectronic Devices XI, SPIE Proc. 4986-28, January 2003.
"High-Temperature Characteristics and Tunability of Long-Wavelength Vertical-Cavity Semiconductor Optical Amplifiers," Toshio Kimura, Staffan Bj?rlin, Joachim Piprek, John E. bowers, IEEE Photonics Technology Letters, vol. 15, no. 11, pp. 1501-1503, November 2003.
"Lateral-cavity design for long-wavelength vertical-cavity lasers," J. Pipek, A. Bregy, Y.-J. Chiu, V. Jayaranman, J.E. Bowers, Proceedings of Nano Tech, Feb. 2003, San Francisco, CA.
"Integrated cavity surface emitting lasers," B. Liu, J. Piprek, J.E. Bowers, SPIE Proceedings 5248-22, (ITCOM｡ｯ03), pp. 148-155, Sept. 2003, Orlando, FL.
"Optimization of GaAs amplification photodetectors for 700% quantum efficiency," J. Piprek, D. Lasaosa, D. Pasquariello, and J. E. Bowers, IEEE J. Selected Topics in Quantum Electronics, Vol. 9, No. 3, May/June 2003, pp. 776-782.
"InP-based waveguide photodetector with integrated photon multiplication," D. Pasquariello, J. Piprek, D. Lasaosa, J. E. Bowers, SPIE Proceedings 5248-34, Semiconductor Optoelectronic Devices for Lightwave Communication, ITCOM, Sept. 2003.
"Novel waveguide photodetectors on InP with integrated light amplification," J. Piprek, D. Pasquariello, D. Lasaosa, and J. E. Bowers, Session: Compoud Semiconductors, ECS Proceedings 2003-04.
Yen-Kuang Kuo, Bo-Ting Liou, Mei-Ling Chen, Sheng-Horng Yen, and Cheng-Yang Lin, 2004, "Effect of band-offset ratio on analysis of violet-blue InGaN laser characteristics", Optics Communications (accepted 2003/12/11). (SCI)
Jih-Yuan Chang and Yen-Kuang Kuo, 2003, "Simulation of blue InGaN quantum-well lasers", Journal of Applied Physics, Vol. 93, No. 9, pp. 4992-4998. (SCI)
2002
"High-power 980-nm pump lasers with flared waveguide design," Balsamo,S.; Ghislotti, G.; Trezzi, F.; Bravetti, P.; Coli, G.; Morasca, S.; Lightwave Technology, Journal of , Volume: 20 , Issue: 8 , Aug. 2002, Pages:1512 - 1516.
"Characterization of GaAs/AlGaAs laser mesas regrown with semi-insulating GaInP by scanning capacitance microscopy," O. Douheret, S. Anand, C. Angulo Barrios, and S. Lourdudoss, APPLIED PHYSICS LETTERS VOLUME 81, NUMBER 6, 5 AUGUST 2002, p. 960.
"Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm," J. P. Zhang, A. Chitnis, V. Adivarahan, S. Wu, V. Mandavilli, R. Pachipulusu, M. Shatalov, G. Simin, J. W. Yang, and M. Asif Khan, APPLIED PHYSICS LETTERS VOLUME 81, NUMBER 26 23 DECEMBER 2002,p. 4910.
"High-speed resonant cavity light-emitting diodes at 650 nm," Dumitrescu,M.M.; Saarinen, M.J.; Guina, M.D.; Pessa, M.V.; Selected Topics in Quantum Electronics, IEEE Journal of , Volume: 8 ,Issue: 2 , March-April2002, Pages:219 - 230.
Yuni Chang, Yen-Kuang Kuo, and Man-Fang Huang, 2002, "Characteristics of 850-nm InGaAs/AlGaAs vertical-cavity surface-emitting lasers", Proceedings of SPIE, Vol. 4913 (Semiconductor Lasers and Applications), pp. 31-40.(EI)
Jih-Yuan Chang and Yen-Kuang Kuo, 2002, "Electronic current overflow and inhomogeneous hole distribution of the InGaN quantum well structures", Proceedings of SPIE, Vol. 4913 (Semiconductor Lasers and Applications), pp. 115-125.(EI)
"Higher efficiency InGaN laser diodes with an improved quantum well capping configuration," M. Hansen, J. Piprek, P. M. Pattison, J. S. Speck, S. Nakamura, and S. P. DenBaars, Applied Physics Letters, vol. 81, no. 22, 4275-77, November 2002.
"Analysis and Optimization of High-Power GaN Lasers," J. Piprek and Shuji Nakamura, IEEE Int. Semiconductor Laser Conf., Garmisch-Patenkirchen, Germany, October 2002.
Joachim Piprek, Yi-Jen Chiu and J.E. Bowers, "Analysis of Multi-Quantum Well Electroabsorption Modulators," Physics and Simulation of Optoelectronic Devices X, Photonics West, January 2002, San Jose, CA.
Joachim Piprek, Y.-J. Chiu, S. Zhang, J.E. Bowers, C.Prott, and H. Hillmer, " High-Efficiency Multi-Quantum-Well Electroabsorption Modulators," Proceedings of the ECS Symposium on Integrated Optoelectronics, May 2002, Philadelphia, PA.
M. Hansen, J.Piprek, P.M. Pattison, J.S. Speck, S. Nakamura, and S.P. DenBaars " "Higher Efficiency InGaN laser diodes with an improved quantum well capping configuration," Applied Physics Letters, vol. 81, no. 22, 4275-77, November 2002.
J. Piprek, J.K.White, A.J. SpringThorpe, " Physics of Output Power Limitations in Long-Wavelength Laser Diodes," SPIE Proceedings 4871, Semiconductor Lasers and Optical Amplifiers for Lightwave Communication Systems, ITcom02, August 2002, Boston, MA.
J. Piprek, S. Nakamura, " Physics of GaN-based High-Power Lasers," IEEE Lester Eastman Conference on High Performance Devices, August 2002, Newark, NJ.
J. Piprek, J. K. White, and A. SpringThorpe, "What Limits the Maximum Output Power of Long-Wavelength AlGaInAs/InP Laser Diodes?," IEEE Journal of Quantum Electronics, vol. 38, 1253 (2002).
J. Piprek and S. Nakamura, "Physics of high-power InGaN/GaN lasers," IEE Proc.-Optoelectron, vol. 149, 145 (2002).
"Influence of Valence-Band Barriers in VLWIR HgCdTe P-on-n Heterojunctions on Photodiode Parameters," J. Wenus, J. Rutkowski, Physica Status Solidi (b),Volume 229, Issue 2 , Pages 1093 - 1096
Barrios, Lourdudoss, and Martinsson, "Analysis of leakage current in GaAs/AlGaAs buried-heterostructure lasers
with a semi-insulating GaInP:Fe burying layer," J. Appl. Phys., Vol. 92, No. 5, p.2506, 2002
2001
"Temperature dependence of the radiative recombination zone in InGaN/GaN multiple quantum well light-emitting diodes," Chia-Ming Lee, Chang-Cheng Chuo, Jing-Fu Dai, Xian-Fa Zheng, and Jen-Inn Chyi, JOURNAL OF APPLIED PHYSICS VOLUME 89, NUMBER 11, 1 JUNE 2001, p. 6554.
"Computer modeling of dual-band HgCdTe photovoltaic detectors," K. Jozwikowski and A. Rogalski, JOURNAL OF APPLIED PHYSICS VOLUME 90, NUMBER 3 1 AUGUST 2001, p. 1286
"Numerical modeling of fluctuation phenomena in semiconductor devices," Krzysztof Jozwikowski, JOURNAL OF APPLIED PHYSICS, VOLUME 90, NUMBER 3, 1 AUGUST 2001, p. 1318
"Optimization of the barrier height in 1.3-mu m InGaAsP multiple-quantum-well active regions for high-temperature operation," Sebastian Mogg and Joachim Piprek, Proc. SPIE Int. Soc. Opt. Eng.4283, 227 (2001)
"Experimental and theoretical analysis of the carrier distribution in asymmetric multiple quantum-well InGaAsP lasers," Hamp, M.J.; Cassidy, D.T.;Quantum Electronics, IEEE Journal of , Volume: 37 , Issue: 1 , Jan. 2001, Pages:92 - 99
"Two-dimensional analysis of double-layer heterojunction HgCdTe photodiodes," Wenus, J.; Rutkowski, J.; Rogalski, A.; Electron Devices, IEEE Transactions on , Volume: 48 , Issue: 7 , July 2001, Pages:1326 - 1332
"Long-wavelength strained-layer InGaAs/GaAs quantum-well lasers grown by molecular beam epitaxy," Microwave and Optical Technology Letters, Volume 29, Issue 2, Date: 20 April 2001, Pages: 75-77, By T. Piwonski, P. Sajewicz, J. M. Kubica, M. Zbroszczyk, K. Reginski, B. Mroziewicz, M. Bugajski
Joachim Piprek, Staffan Bjorlin and John Bowers, "Modeling And Optimization Of Vertical-Cavity Semiconductor Laser Amplifiers," Physics and Simulation of Optoelectronic Devices IX, Photonics West, SPIE Proc. 4283-15, 2001.
"Simulation and analysis of nitride laser diodes" (invited), J. Piprek, Laser Workshop, ETH Zurich, Switzerland, October 2001.
"Advanced analysis of high-temperature failure mechanisms in telecom lasers," J. Piprek, ITCOM, Semiconductor Lasers for Lightwave Communication Systems, Denver, CO, August 2001.
Joachim Piprek, Staffan Bjorlin and John Bowers, "Design and Analysis of Vertical-Cavity Semiconductor Optical Amplifiers," IEEE Journal of Quantum Electronics, Volume 37, Number 1, Pages 127-134, January 2001.
Yi-Jen Chiu, Sheng Zhang, Volkan Kaman, Joachim Piprek and John Bowers, "High-Speed Traveling-Wave Electroabsorption Modulators," Symposium on Radio Frequency Photonic Devices and Systems II, 46th SPIE Annual Meeting, San Diego, August 2001.
M. Nawaz, K. Permthammasin,"A design analysis of a GaInP/GaInAs/GaAs-based 980 nm Al-free pump laser using self-consistent numerical simulation," Semiconductor Science and Technology, vol. 16, pp. 877-884, 2001.
"A theoretical optimization of GaInP/GaInAs/GaAs based 980 nm Al-free pump laser using self-consistent numerical simulation," Nawaz, M.; Permthamassin, K.; Zaring, C.; Willander, M.; Semiconductor Device Research Symposium, 2001 International;5-7 Dec. 2001, Pages:289 - 292
"Impact of the LWIR photodiodes geometry on their basic parameters," Jakub Wenus, Jaroslaw Rutkowski, Krzysztof Adamiec, Leszek Kubiak, and Pawel Madejczyk, Proc. SPIE Int. Soc. Opt. Eng. 4413, 363 (2001)
"Modeling and numerical simulation of the optical intensity distribution in double-heterostructure semiconductor lasers," Ladislav Kuna and Frantisek Uherek, Proc. SPIE Int. Soc. Opt. Eng.4356, 283 (2001)
2000
"IMPROVED DARK CURRENT CHARACTERISTICS OF GaAdnGaAs MULTI-QUANTUM WELL SOLAR CELLS FABRICATED BY ATOMIC H-ASSISTED MOLECULAR BEAM EPITAXY," Okada, Y.; Seki, S.; Hagiwara, Y.; Kawabe, M, Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference, 2000, p. 1277.
Yen-Kuang Kuo, Kuo-Kai Horng, Ya-Lien Huang, Jih-Yuan Chang, Yuni Chang, and Hsu-Ching Huang, 2000, "Temperature dependent optical properties of the InGaN semiconductor materials: experimental and numerical studies", Proceedings of SPIE, Vol. 4078 (Optoelectronic Materials and Devices), pp. 579-586. (EI)
Man-Fang Huang, Pin-Hui Liu, J. S. Liu, Yen-Kuang Kuo, Ya-Lien Huang, Kuo-Kai Horng, Jih-Yuan Chang, Yuni Chang, and Hsu-Ching Huang, "Experimental and numerical study on the optical properties of yellow-green AlGaInP light emitting diodes", Proceedings of SPIE, Vol. 4078 (Optoelectronic Materials and Devices), pp. 595-602. (EI)
Yen-Kuang Kuo, Hsu-Ching Huang, Jih-Yuan Chang, Yuni Chang, Kuo-Kai Horng, Ya-Lien Huang, Wen-Wei Lin, and Man-Fan Huang, 2000, "A study of the optical properties of the yellow-green AlGaInP and the blue-UV InGaN semiconductor materials", in the 13th Annual Lasers and Electro Optics Society Meeting (IEEE/LEOS 2000, Puerto Rico), paper ThL 4 (Conference Proceedings pp. 790-791).
Yen-Kuang Kuo, Kuo-Kai Horng, Hsu-Ching Huang, Ya-Lien Huang, Jih-Yuan Chang, Yuni Chang, Wen-Wei Lin, Yi-An Chang, and Chih-Kang Chang, 2000, "Numerical study on III-N and III-P semiconductor materials with LASTIP, PICS3D, and CASTEP", in the 2nd International Photonics Conference (IPC2000, National Chiao Tung University, Hsinchu, Taiwan), paper W-S1-A003, Proc. IPC 2000, pp. 17-19.
Jih-Yuan Chang and Yen-Kuang Kuo, 2000, "Temperature-dependent current overflow of InGaN quantum well structure - a numerical study", in the 2nd International Photonics Conference, paper W-S1-A004, Proc. IPC 2000, pp. 20-22.
Hsu-Ching Huang, Yuni Chang, and Yen-Kuang Kuo, 2000, "A numerical study on 570-nm AlGaInP quantum well structure with tensile-strained barrier", in the 2nd International Photonics Conference, paper Th-T1-B002, Proc. IPC 2000, pp. 340-342.
Kuo-Kai Horng, Hsu-Ching Huang, and Yen-Kuang Kuo, 2000, "Numerical study on an ultraviolet GaN/Al0.2Ga0.8N vertical-cavity surface-emitting laser", in the 2nd International Photonics Conference, paper TH-S1-P004, Proc. IPC 2000, pp. 497-499.
"Self-Consistent Simulation and Analysis of InGaN/GaN Lasers," J. Piprek, Shuji Nakamura, LEOS Annual Meeting, Rio Grande, November 2000.
"Simulation and Optimization of 420nm InGaN/GaN Laser Diodes," J. Piprek, K. Sink, M. Hansen, J. Bowers, and S. DenBaars, SPIE Photonics West Symp. on Physics and Simulation of Optoelectronic Devices, San Jose, CA, January 2000.
M.J. Hamp, D.T. Cassidy, B.J. Robinson, Q.C. Zhao, D.A. Thompson, "Effect of Barrier Thickness on the Carrier Distribution in Asymmectric MQW InGaAsP Lasers," IEEE Photonic Technology Letters, vol. 12, No. 2. February 2000.
J. Piprek , P. Abraham, and J.E. Bowers,"Self-Consistent Analysis of High-Temperature Effects on Strained-Layer Multiquantum-Well InGaAsP-InP Lasers," IEEE Journal of Quantum. Electronics. Vol.36. No3. March 2000.
-1999
"Hole distribution in InGaAsP 1.3-um multiple-quantum-well laser structures with different hole confinement energies," Silfvenius, C.; Landgren, G.; Marcinkevicius, S.; Quantum Electronics, IEEE Journal of , Volume: 35, Issue: 4 ; April 1999, Pages:603-607
"High-performance 1.3-um InAsP strained-layer quantum-well ACIS (Al-oxide confined inner stripe) lasers," Iwai, N.; Mukaihara, T.; Yamanaka, N.; Kumada, K.; Shimizu, H.; Kasukawa, A.; Selected Topics in Quantum Electronics, IEEE Journal of ,Volume: 5 ,Issue: 3 ; May-June 1999, Pages:694 - 700
"Cavity length effects on internal loss and quantum efficiency of multiquantum-well lasers," Piprek, J.; Abraham, P.; Bowers, J.E.;Selected Topics in Quantum Electronics, IEEE Journal of ,Volume: 5 ,Issue: 3 ; May-June 1999, Pages:643 - 647
M. Dumitrescu, M. Toivonen, P. Savolainen, S. Orsila, M. Pessa. "High-power Edge Emitting Red Laser Diode Optimisation using Optical Simulation," Optical and Quantum Electronics 31: 1009 1030. 1999.
J. Piprek, P. Abraham, and J.E. Bowers," Efficiency analysis of quantum well lasers using PICS3D," Proc. Integrated Photonics Research Conf., Santa Barbara, July 1999.
P. Abraham, J. Piprek, S.P. DenBaars, and J.E. Bowers, "Study of temperature effects on loss mechanisms in 1.55 um laser diodes with In(0.81)Ga(0.19)P electron stopper layer," Semicond. Sci. Technology. vol. 14, (1999) pp. 419-424.
J. Piprek, P. Abraham, and J.E. Bowers, "Self-consistent analysis of high-temperature effects on InGaAsP/InP lasers," Proc. IEEE International Symposium on Compound Semiconductors, Berlin 1999.
J. Piprek, K. Takiguchi, A. Black, P. Abraham, A. Keating,V. Kaman, S. Zhang, and J.E. Bowers, "Analog Modulation of 1.55 um vertical-cavity lasers," SPIE Proc. vol. 3627. "Vertical-Cavity Surface-Emitting Lasers III," leds. Kent D. Choquette and Chun Lei (1999).
P. Abraham, J. Piprek, S.P. DenBaars, and J.E. Bowers, "Improvement of internal quantum efficiency in 1.55 um laser diodes with InGaP electron stopper layer," Jpn. J. Appl. Phys. vol. 38 (1999) pp. 1239-1242.
M.J. Hamp, D.T. Cassidy, B.J. Robinson, Q.C. Zhao, D.A. Thompson, and M. Davies, "Effect of Barrier Height on the Uneven Carrier Distribution in Asymmetric MQW InGaAsP Lasers," IEEE Photonic Technology Letters, vol. 10, No. 10. pp. 1380-1382. October 1998.
J. Piprek, P. Abraham, S.P. DenBaars, and J.E. Bowers, "Effects of an InGaP electron barrier layer on 1.55 um laser diode performance," Proc. 10th International Conf. on Indium Phoshide and Related Materials, Tsukuba, Japan, May 1998.
J. Piprek, P. Abraham, and J.E. Bowers, "Carrier nonuniformity effects on the internal efficiency of multiquantum-well lasers," Appl. Phys. Lett., vol. 74, No. 4, pp. 489-491, Jan. 1999.
J. Piprek, P. Abraham, and J.E. Bowers, "Effects of quantum well recombination losses on the internal differential efficiency of multi quantum well lasers," Proc. 16th IEEE International Semiconductor Laser Conf.,Paper TuE37, Nara, Japan 1998.
Y. Yoshida, H. Watanabe, K. Shibata, A. Takemoto, and H. Higuchi, "Analysis of characteristic temperature for InGaAsP DH lasers with p-n-p-n blocking layers using two-dimensional device simulator," IEEE J. Quantum Electronics, vol. 34, No. 7, July 1998.
Kay Domen , Reiko Soejima, Akito Kuramata , Toshiyuki Tanahashi, "Electron Overflow to the AlGaN p-Cladding Layer in InGaN/GaN/AlGaN MQW Laser Diodes," Internet Journal of Nitride Semiconductor Research, vol. 3, article 2. 1998.
"Carrier transport effects in 1.3pm MQW InGaAsP laser design," Christofer Silfvenius and Gunnar Landgren, 10th Intern. Conf. on Indium Phosphide and Related Materials,11-15 May 1998 Tsukuba, Japan, paper TUP-45
"1.4-um InGaAsP-InP strained multiple-quantum-well laser for broad-wavelength tunability," Xiang Zhu; Cassidy, D.T.; Hamp, M.J.; Thompson, D.A.; Robinson, B.J.; Zhao, Q.C.; Davies, M.; Photonics Technology Letters, IEEE, Volume: 9, Issue:9, Sept. 1997, Pages:1202 - 1204.
A. Lindell, M. Pessa and A. Salokatve, F. Bernardini and R. M. Nieminen, "Band offset at the GaInP/GaAs heterojunction," J.Appl. Phys., vol. 82, No. 7, 1 Oct. 1997, pp. 3374-3380.
P. M. Mensz, "Prospects for truly blue ZnSe/Zn{1-u}Mg{u}S{v}Se{1-v}/Zn{1-x}Mg{x}S{y}Se{1-y} semiconductor diode laser," Appl. Phys. Lett., vol. 65, pp. 2627-2629, 1994.
P. M. Mensz, J. Crystal Growth, vol. 138, p. 697, 1994.

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Z.-M. (Simon) Li, "Physical models and numerical simulation of modern semiconductor lasers (invited)," Photonic West Conference (San Jose, California, 14 Feb. 1997). Also published in SPIE Proc.1997.
S. Li, Y. Wu, and R. Rambaran, "Simulation software tackles diode laser design," Laser Focus World, Nov. 1996. pp. 233-234.
Z.-M. Li, "Two-dimensional numerical simulation of semiconductor lasers," Book chapter in Progress in Electromagnetics Research, J. Electromagnetic Waves and Applications, Chief editor: J.A. Kong, Editor: W.P. Huang,1995 EMW Publishing.
Zhan-Ming Li, Michel Dion, Yao Zou, Jun Wang,Michael Davies and Sean P. McAlister,"An approximate k.p theory for optical gain of strained InGaAsP quantum-well lasers," IEEE J.Quantum Electron., vol. 30, pp. 538-546, 1994
S.P. McAlister and Z.-M. Li," Two-dimensional simulation of quantum well lasers (invited paper)," Proceedings of the SPIE, volume 2146, Physics and Simulation of Optoelectronic Devices II, pp.162-173, 1994.
Z.-M. Li, "Effects of nonlinear gain suppression to the higher-order lateral modes in a 2D simulation of quantum well lasers," Proceedings of the SPIE, volume 2146, Physics and Simulation of Optoelectronic Devices II, pp. 475-484, 1994.
Z.-M. Li, M. Dion, S.P. McAlister R.L. Williams and G.C. Aers, "Incorporation of strain into a two-dimensional model of quantum well-well semiconductor lasers,'' IEEE J. Quantum Electron., vol. 29, pp. 346-354, 1993
S.A. Wong, S.P. McAlister and Z.-M. Li, "A comparison of some approximations for the Fermi-Dirac integral of order 1/2,'' Solid State Electronics, vol. 37, pp. 61-64, 1993.
Z.-M. Li, K. M. Dzurko, A. Delage and S.P. McAlister, "A self-consistent two-dimensional model of quantum-well semiconductor lasers: optimization of a GRIN-SCH SQW laser structure,'' IEEE J. Quantum Electron.,vol. 28, pp. 792-802 (1992).
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